Inventor · disambiguated record
Motoi Ashida
Also filed as: ASHIDA MOTOI
26 granted patents·4 pending applications·392 citations·filing 1992–2013
96Inventor score
Files withRENESAS TECH CORP13MITSUBISHI ELECTRIC CORP10RENESAS ELECTRONICS CORP4ASHIDA MOTOI2MATSUDA RYOJI1
Top patents by PatentIndex Score
30 records- 0195US5952678ASRAM cell with no PN junction between driver and load transistors and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 14, 1999·118 cites·3 claims
- 0286US7709874B2Semiconductor device having a split gate structure with a recessed top face electrodeRENESAS TECH CORP·Filed 2007·Granted May 4, 2010·10 cites·6 claims
- 0386US5283455AThin film field effect element having an LDD structureMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 1, 1994·66 cites·5 claims
- 0477US5262655AThin film field effect device having an LDD structure and a method of manufacturing such a deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 16, 1993·41 cites·12 claims
- 0574US5635731ASRAM cell with no PN junction between driver and load transistors and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 3, 1997·30 cites·10 claims
- 0670US8174062B2Semiconductor memory device and manufacturing method thereofASHIDA MOTOI·Filed 2009·Granted May 8, 2012·4 cites·1 claims
- 0769US6531747B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 11, 2003·15 cites·16 claims
- 0868US6853022B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Feb 8, 2005·17 cites·11 claims
- 0964US7348637B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Mar 25, 2008·2 cites·9 claims
- 1063US6169313B1Static semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 2, 2001·35 cites·16 claims
- 1163US5382807AField effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 17, 1995·22 cites·17 claims
- 1256US8248846B2Magnetic memory device, and manufacturing method thereofASHIDA MOTOI·Filed 2010·Granted Aug 21, 2012·2 cites·8 claims
- 1353US7485522B2Method of manufacturing semiconductor device having dual gate electrodeRENESAS TECH CORP·Filed 2007·Granted Feb 3, 2009·0 cites·1 claims
- 1453US7476581B2Method of manufacturing semiconductor device having dual gate electrodeRENESAS TECH CORP·Filed 2007·Granted Jan 13, 2009·0 cites·1 claims
- 1552US9263113B2Semiconductor memory device with memory array and dummy memory arrayRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 16, 2016·1 cites·17 claims
- 1651US7320910B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Jan 22, 2008·0 cites·4 claims
- 1750US7939448B2Semiconductor device having electrode and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2010·Granted May 10, 2011·0 cites·2 claims
- 1849US7816207B2Semiconductor device having electrode and manufacturing method thereofRENESAS TECH CORP·Filed 2010·Granted Oct 19, 2010·0 cites·3 claims
- 1949US2011175231A1Semiconductor Device Having Electrode and Manufacturing Method ThereofRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2047US7038281B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted May 2, 2006·2 cites·9 claims
- 2146US7582550B2Semiconductor memory device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Granted Sep 1, 2009·0 cites·4 claims
- 2245US6984859B2Semiconductor memory device with static memory cellsRENESAS TECH CORP·Filed 2004·Granted Jan 10, 2006·6 cites·19 claims
- 2345US6069818ASemiconductor memory device having storage nodes doped with first and second type impuritiesMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 30, 2000·9 cites·6 claims
- 2442US7145205B2Semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Dec 5, 2006·0 cites·8 claims
- 2542US6849484B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Feb 1, 2005·1 cites·10 claims
- 2642US5973987ASemiconductor memory device delaying ATD pulse signal to generate word line activation signalMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 26, 1999·8 cites·9 claims
- 2740US2007164342A1Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 2836US2011062539A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 2933US6150685ASemiconductor device with filed-effect transistors of a complementary type and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·3 cites·13 claims
- 3032US2012069638A1Semiconductor deviceMATSUDA RYOJI·Filed 2011·Application pending·0 cites
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