Inventor · disambiguated record
Cherng-Shyan Tsay
Also filed as: TSAY CHERNG-SHYAN
11 granted patents·1 pending application·76 citations·filing 2005–2021
88Inventor score
Top patents by PatentIndex Score
12 records- 0197US9870443B2Method and apparatus for integrated circuit mask patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·26 cites·20 claims
- 0290US8589830B2Method and apparatus for enhanced optical proximity correctionCHANG CHIA-CHENG·Filed 2012·Granted Nov 19, 2013·29 cites·20 claims
- 0382US8972909B1OPC method with higher degree of freedomTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 3, 2015·4 cites·20 claims
- 0482US7778805B2Regression system and methods for optical proximity correction modelingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 17, 2010·7 cites·27 claims
- 0581US10990744B2Method and apparatus for integrated circuit mask patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·1 cites·20 claims
- 0679US9213233B2Photolithography scattering bar structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·3 cites·20 claims
- 0776US9026956B1Method of lithographic process evaluationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 5, 2015·4 cites·20 claims
- 0871US11748549B2Method and apparatus for integrated circuit mask patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 0968US8972912B1Structure for chip extensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 3, 2015·2 cites·20 claims
- 1059US8048590B2Photolithography mask having a scattering bar structure that includes transverse linear assist featuresTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 1, 2011·0 cites·20 claims
- 1148US8677290B2Method of forming and using photolithography mask having a scattering bar structureYEN YUNG-SUNG·Filed 2011·Granted Mar 18, 2014·0 cites·20 claims
- 1242US2007111109A1Photolithography scattering bar structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
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