Inventor · disambiguated record
Han Wui Then
Also filed as: THEN HAN WUI
256 granted patents·68 pending applications·805 citations·filing 2008–2025
99Inventor score
Top patents by PatentIndex Score
324 records- 0198US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0297US12107060B2Microelectronic assemblies with inductors in direct bonding regionsINTEL CORP·Filed 2020·Granted Oct 1, 2024·5 cites·20 claims
- 0397US12062631B2Microelectronic assemblies with inductors in direct bonding regionsINTEL CORP·Filed 2020·Granted Aug 13, 2024·4 cites·20 claims
- 0497US10431717B1Light-emitting diode (LED) and micro LED substrates and methods for making the sameINTEL CORP·Filed 2018·Granted Oct 1, 2019·17 cites·17 claims
- 0597US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 0697US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0796US9209290B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 8, 2015·11 cites·14 claims
- 0896US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 0996US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 1096US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 1195US10720505B2Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performanceINTEL CORP·Filed 2016·Granted Jul 21, 2020·10 cites·19 claims
- 1295US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 1395US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 1495US9530878B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 27, 2016·8 cites·14 claims
- 1595US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 1695US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 1795US7813396B2Transistor laser devices and methodsUNIV ILLINOIS·Filed 2009·Granted Oct 12, 2010·25 cites·22 claims
- 1894US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 1994US9755062B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2016·Granted Sep 5, 2017·7 cites·20 claims
- 2094US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 2194US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 2293US10658471B2Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layersINTEL CORP·Filed 2015·Granted May 19, 2020·8 cites·18 claims
- 2393US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 2493US10056456B2N-channel gallium nitride transistorsINTEL CORP·Filed 2014·Granted Aug 21, 2018·8 cites·25 claims
- 2593US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 2693US8987091B2III-N material structure for gate-recessed transistorsTHEN HAN WUI·Filed 2011·Granted Mar 24, 2015·11 cites·21 claims
- 2793US8179937B2High speed light emitting semiconductor methods and devicesWALTER GABRIEL·Filed 2010·Granted May 15, 2012·12 cites·6 claims
- 2892US11233053B2Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabricationINTEL CORP·Filed 2017·Granted Jan 25, 2022·6 cites·20 claims
- 2992US10541305B2Group III-N nanowire transistorsINTEL CORP·Filed 2019·Granted Jan 21, 2020·4 cites·20 claims
- 3092US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 3192US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 3292US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 3392US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 3491US11387328B2III-N tunnel device architectures and high frequency mixers employing a III-N tunnel deviceINTEL CORP·Filed 2018·Granted Jul 12, 2022·6 cites·20 claims
- 3591US10325774B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2014·Granted Jun 18, 2019·8 cites·16 claims
- 3691US10186581B2Group III-N nanowire transistorsINTEL CORP·Filed 2017·Granted Jan 22, 2019·4 cites·20 claims
- 3790US10665708B2Semiconductor devices with raised doped crystalline structuresINTEL CORP·Filed 2019·Granted May 26, 2020·4 cites·14 claims
- 3890US9590069B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2015·Granted Mar 7, 2017·5 cites·13 claims
- 3990US8872225B2Defect transferred and lattice mismatched epitaxial filmINTEL CORP·Filed 2012·Granted Oct 28, 2014·12 cites·25 claims
- 4089US12199018B2Direct bonding in microelectronic assembliesINTEL CORP·Filed 2020·Granted Jan 14, 2025·2 cites·20 claims
- 4189US11295992B2Tunnel polarization junction III-N transistorsINTEL CORP·Filed 2017·Granted Apr 5, 2022·4 cites·20 claims
- 4289US11183613B2Group III-nitride light emitting devices including a polarization junctionINTEL CORP·Filed 2017·Granted Nov 23, 2021·2 cites·19 claims
- 4389US10032911B2Wide band gap transistor on non-native semiconductor substrateINTEL CORP·Filed 2017·Granted Jul 24, 2018·5 cites·16 claims
- 4489US8954021B2Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2014·Granted Feb 10, 2015·5 cites·11 claims
- 4588US11043627B2Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devicesINTEL CORP·Filed 2016·Granted Jun 22, 2021·5 cites·20 claims
- 4688US10692839B2GaN devices on engineered silicon substratesINTEL CORP·Filed 2015·Granted Jun 23, 2020·5 cites·16 claims
- 4788US10229991B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2014·Granted Mar 12, 2019·6 cites·25 claims
- 4888US9947780B2High electron mobility transistor (HEMT) and method of fabricationINTEL CORP·Filed 2016·Granted Apr 17, 2018·4 cites·13 claims
- 4988US9847448B2Forming LED structures on silicon finsINTEL CORP·Filed 2013·Granted Dec 19, 2017·8 cites·30 claims
- 5088US9391181B2Lattice mismatched hetero-epitaxial filmINTEL CORP·Filed 2012·Granted Jul 12, 2016·10 cites·14 claims
Showing the top 50 of 324 patent records by PatentIndex Score.
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