Inventor · disambiguated record
Nyles Wynn Cody
Also filed as: CODY NYLES · CODY NYLES W · CODY NYLES WYNN
48 granted patents·26 pending applications·865 citations·filing 2000–2025
98Inventor score
Top patents by PatentIndex Score
74 records- 0199US11978771B2Gate-all-around (GAA) device including a superlatticeATOMERA INC·Filed 2022·Granted May 7, 2024·7 cites·21 claims
- 0299US11848356B2Method for making semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2021·Granted Dec 19, 2023·6 cites·21 claims
- 0399US11837634B2Semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2021·Granted Dec 5, 2023·10 cites·21 claims
- 0499US11728385B2Semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2021·Granted Aug 15, 2023·7 cites·24 claims
- 0599US11721546B2Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2021·Granted Aug 8, 2023·6 cites·20 claims
- 0699US11430869B2Method for making superlattice structures with reduced defect densitiesATOMERA INC·Filed 2020·Granted Aug 30, 2022·8 cites·13 claims
- 0799US10109479B1Method of making a semiconductor device with a buried insulating layer formed by annealing a superlatticeATOMERA INC·Filed 2017·Granted Oct 23, 2018·82 cites·23 claims
- 0898US11923418B2Semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2021·Granted Mar 5, 2024·7 cites·24 claims
- 0998US11810784B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2021·Granted Nov 7, 2023·9 cites·27 claims
- 1098US11682712B2Method for making semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2021·Granted Jun 20, 2023·7 cites·24 claims
- 1198US11664427B2Vertical semiconductor device with enhanced contact structure and associated methodsATOMERA INC·Filed 2022·Granted May 30, 2023·7 cites·32 claims
- 1298US11631584B1Method for making semiconductor device with selective etching of superlattice to define etch stop layerATOMERA INC·Filed 2021·Granted Apr 18, 2023·7 cites·20 claims
- 1398US11387325B2Vertical semiconductor device with enhanced contact structure and associated methodsATOMERA INC·Filed 2020·Granted Jul 12, 2022·12 cites·35 claims
- 1498US11302823B2Method for making semiconductor device including a superlattice with different non-semiconductor material monolayersATOMERA INC·Filed 2020·Granted Apr 12, 2022·11 cites·21 claims
- 1598US11177351B2Semiconductor device including a superlattice with different non-semiconductor material monolayersATOMERA INC·Filed 2020·Granted Nov 16, 2021·16 cites·21 claims
- 1698US11075078B1Method for making a semiconductor device including a superlattice within a recessed etchATOMERA INC·Filed 2020·Granted Jul 27, 2021·21 cites·24 claims
- 1798US10879356B2Method for making a semiconductor device including enhanced contact structures having a superlatticeATOMERA INC·Filed 2019·Granted Dec 29, 2020·21 cites·26 claims
- 1898US10811498B2Method for making superlattice structures with reduced defect densitiesATOMERA INC·Filed 2018·Granted Oct 20, 2020·35 cites·16 claims
- 1998US10777451B2Semiconductor device including enhanced contact structures having a superlatticeATOMERA INC·Filed 2019·Granted Sep 15, 2020·30 cites·27 claims
- 2098US10727049B2Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlatticeATOMERA INC·Filed 2018·Granted Jul 28, 2020·30 cites·25 claims
- 2198US10566191B1Semiconductor device including superlattice structures with reduced defect densitiesATOMERA INC·Filed 2018·Granted Feb 18, 2020·51 cites·22 claims
- 2298US10468245B2Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlatticeATOMERA INC·Filed 2018·Granted Nov 5, 2019·46 cites·25 claims
- 2397US7438760B2Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor depositionASM INC·Filed 2006·Granted Oct 21, 2008·37 cites·31 claims
- 2496US9558939B1Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen sourceATOMERA INC·Filed 2016·Granted Jan 31, 2017·106 cites·25 claims
- 2596US7816236B2Selective deposition of silicon-containing filmsASM INC·Filed 2006·Granted Oct 19, 2010·42 cites·34 claims
- 2695US12046470B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2023·Granted Jul 23, 2024·1 cites·27 claims
- 2795US9721790B2Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity controlATOMERA INC·Filed 2016·Granted Aug 1, 2017·11 cites·33 claims
- 2894US7772097B2Methods of selectively depositing silicon-containing filmsASM INC·Filed 2007·Granted Aug 10, 2010·28 cites·23 claims
- 2994US6521961B1Semiconductor device using a barrier layer between the gate electrode and substrate and method thereforMOTOROLA INC·Filed 2000·Granted Feb 18, 2003·91 cites·6 claims
- 3093US7785995B2Semiconductor buffer structuresASM INC·Filed 2006·Granted Aug 31, 2010·16 cites·33 claims
- 3192US7608526B2Strained layers within semiconductor buffer structuresASM INC·Filed 2006·Granted Oct 27, 2009·18 cites·39 claims
- 3291US2025048701A1Method for making gate-all-around (gaa) device including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 3389US12119380B2Method for making semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2023·Granted Oct 15, 2024·0 cites·15 claims
- 3489US7825401B2Strained layers within semiconductor buffer structuresASM INC·Filed 2009·Granted Nov 2, 2010·12 cites·28 claims
- 3588US12322594B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 3688US2024194740A1Gate-all-around (gaa) device including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 3784US12142641B2Method for making gate-all-around (GAA) device including a superlatticeATOMERA INC·Filed 2022·Granted Nov 12, 2024·0 cites·21 claims
- 3884US7022593B2SiGe rectification processASM INC·Filed 2004·Granted Apr 4, 2006·29 cites·25 claims
- 3984US2025273460A1Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2025·Application pending·0 cites
- 4084US2025081565A1Non-volatile memory including a depletion layer with nanocrystalsATOMERA INC·Filed 2024·Application pending·0 cites
- 4184US2025081566A1Method for making a non-volatile memory including a depletion layer with nanocrystalsATOMERA INC·Filed 2024·Application pending·0 cites
- 4284US2025079164A1Method for making a non-volatile memory including a depletion layer with a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 4384US2025081475A1Non-volatile memory including a depletion layer with a superlattice and related methodsATOMERA INC·Filed 2024·Application pending·0 cites
- 4483US12477798B2Semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2024·Granted Nov 18, 2025·0 cites·8 claims
- 4581US12315723B2Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4681US7648690B2Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor depositionASM INC·Filed 2008·Granted Jan 19, 2010·4 cites·27 claims
- 4781US2025107192A1Semiconductor device including superlattice with o18 enriched monolayersATOMERA INC·Filed 2024·Application pending·0 cites
- 4881US2025259841A1Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2025·Application pending·0 cites
- 4980US12199148B2Semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2023·Granted Jan 14, 2025·0 cites·28 claims
- 5079US12315722B2Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlatticeATOMERA INC·Filed 2024·Granted May 27, 2025·0 cites·19 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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