Inventor · disambiguated record
Nicholas Minutillo
Also filed as: MINUTILLO NICHOLAS · MINUTILLO NICHOLAS G
22 granted patents·4 pending applications·22 citations·filing 2016–2024
91Inventor score
Files withINTEL CORP26
Top patents by PatentIndex Score
26 records- 0198US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0286US11171207B2Transistor with isolation below source and drainINTEL CORP·Filed 2017·Granted Nov 9, 2021·3 cites·20 claims
- 0384US11804523B2High aspect ratio source or drain structures with abrupt dopant profileINTEL CORP·Filed 2019·Granted Oct 31, 2023·3 cites·18 claims
- 0484US11610889B2Arsenic-doped epitaxial, source/drain regions for NMOSINTEL CORP·Filed 2018·Granted Mar 21, 2023·3 cites·15 claims
- 0581US11257904B2Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2018·Granted Feb 22, 2022·2 cites·25 claims
- 0680US12288803B2Transistor with isolation below source and drainINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 0780US11552169B2Source or drain structures with phosphorous and arsenic co-dopantsINTEL CORP·Filed 2019·Granted Jan 10, 2023·2 cites·25 claims
- 0878US11276694B2Transistor structure with indium phosphide channelINTEL CORP·Filed 2018·Granted Mar 15, 2022·2 cites·20 claims
- 0978US11164974B2Channel layer formed in an art trenchINTEL CORP·Filed 2017·Granted Nov 2, 2021·2 cites·18 claims
- 1076US12342611B2Source or drain structures with vertical trenchesINTEL CORP·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 1175US12288808B2High aspect ratio source or drain structures with abrupt dopant profileINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1273US12094881B2Arsenic-doped epitaxial source/drain regions for NMOSINTEL CORP·Filed 2023·Granted Sep 17, 2024·0 cites·17 claims
- 1371US11935887B2Source or drain structures with vertical trenchesINTEL CORP·Filed 2019·Granted Mar 19, 2024·1 cites·16 claims
- 1470US11756998B2Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 1550US12224337B2PGaN enhancement mode HEMTs with dopant diffusion spacerINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·20 claims
- 1649US11164747B2Group III-V semiconductor devices having asymmetric source and drain structuresINTEL CORP·Filed 2017·Granted Nov 2, 2021·0 cites·20 claims
- 1748US11049773B2Art trench spacers to enable fin release for non-lattice matched channelsINTEL CORP·Filed 2016·Granted Jun 29, 2021·0 cites·13 claims
- 1847US11557658B2Transistors with high density channel semiconductor over dielectric materialINTEL CORP·Filed 2017·Granted Jan 17, 2023·0 cites·9 claims
- 1947US11508577B2Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2018·Granted Nov 22, 2022·0 cites·17 claims
- 2047US2023207560A1Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistanceINTEL CORP·Filed 2021·Application pending·0 cites
- 2145US12439627B2Gate structures to enable lower subthreshold slope in gallium nitride-based transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·25 claims
- 2244US11695081B2Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2018·Granted Jul 4, 2023·0 cites·22 claims
- 2343US11355621B2Non-planar semiconductor device including a replacement channel structureINTEL CORP·Filed 2018·Granted Jun 7, 2022·0 cites·24 claims
- 2441US2020006523A1Channel layer for iii-v metal-oxide-semiconductor field effect transistors (mosfets)INTEL CORP·Filed 2018·Application pending·0 cites
- 2541US2023132548A1Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 2638US2020006501A1Dielectric lining layers for semiconductor devicesINTEL CORP·Filed 2017·Application pending·0 cites
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