Inventor · disambiguated record
Seiichi Isomae
Also filed as: ISOMAE S · ISOMAE SEIICHI
6 granted patents·352 citations·filing 1977–2003
86Inventor score
Top patents by PatentIndex Score
6 records- 0197US4768076ARecrystallized CMOS with different crystal planesHITACHI LTD·Filed 1985·Granted Aug 30, 1988·174 cites·12 claims
- 0288US6198157B1Semiconductor device having buried boron and carbon regionsHITACHI LTD·Filed 1998·Granted Mar 6, 2001·108 cites·11 claims
- 0379US6635950B1Semiconductor device having buried boron and carbon regions, and method of manufacture thereofHITACHI LTD·Filed 2000·Granted Oct 21, 2003·24 cites·8 claims
- 0469US6226079B1Defect assessing apparatus and method, and semiconductor manufacturing methodHITACHI LTD·Filed 1998·Granted May 1, 2001·35 cites·9 claims
- 0548US7189278B2Method and apparatus for producing semiconductor or metal particlesCLEAN VENTURE 21 CORP·Filed 2003·Granted Mar 13, 2007·1 cites·25 claims
- 0646US4126880AGermanium-containing silicon nitride filmHITACHI LTD·Filed 1977·Granted Nov 21, 1978·10 cites·15 claims
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