Inventor · disambiguated record
Arnd Scholz
Also filed as: SCHOLZ ARND · SCHOLZ ARND R
9 granted patents·6 pending applications·133 citations·filing 2001–2008
88Inventor score
Files withQIMONDA AG6INFINEON TECHNOLOGIES AG4INFINEON TECHNOLOGIES CORP2HARTWICH JESSICA1MOLL HANS-PETER1
Top patents by PatentIndex Score
15 records- 0193US7863136B2Method of manufacturing integrated circuits including a FET with a gate spacer and a finQIMONDA AG·Filed 2008·Granted Jan 4, 2011·35 cites·15 claims
- 0289US7622354B2Integrated circuit and method of manufacturing an integrated circuitQIMONDA AG·Filed 2007·Granted Nov 24, 2009·21 cites·10 claims
- 0385US6951822B2Method for forming inside nitride spacer for deep trench device DRAM cellINFINEON TECHNOLOGIES CORP·Filed 2001·Granted Oct 4, 2005·37 cites·14 claims
- 0472US7867912B2Methods of manufacturing semiconductor structuresQIMONDA AG·Filed 2007·Granted Jan 11, 2011·4 cites·34 claims
- 0571US6825093B2Process window enhancement for deep trench spacer conservationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 30, 2004·14 cites·7 claims
- 0662US6586300B1Spacer assisted trench top isolation for vertical DRAM'sINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 1, 2003·10 cites·21 claims
- 0756US6673686B1Method of forming a gate electrode contact spacer for a vertical DRAM deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 6, 2004·6 cites·16 claims
- 0853US8138538B2Interconnect structure for semiconductor devicesMOLL HANS-PETER·Filed 2008·Granted Mar 20, 2012·1 cites·25 claims
- 0950US6620699B2Method for forming inside nitride spacer for deep trench device DRAM cellINFINEON TECHNOLOGIES CORP·Filed 2001·Granted Sep 16, 2003·5 cites·14 claims
- 1044US2008296674A1Transistor, integrated circuit and method of forming an integrated circuitQIMONDA AG·Filed 2007·Application pending·0 cites
- 1141US2009321805A1Insulator material over buried conductive lineQIMONDA AG·Filed 2008·Application pending·0 cites
- 1240US2008299722A1Manufacturing method for forming a recessed channel transistor, method for forming a corresponding integrated semiconductor memory device and corresponding self-aligned mask structureHARTWICH JESSICA·Filed 2007·Application pending·0 cites
- 1339US2008283910A1Integrated circuit and method of forming an integrated circuitQIMONDA AG·Filed 2007·Application pending·0 cites
- 1438US2006134877A1Method for fabricating a buried conductive connection to a trench capacitor and a memory cell with such a connectionINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1534US2007176253A1Transistor, memory cell and method of manufacturing a transistorWANG PENG-FEI·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →