Inventor · disambiguated record
Haruhito Shimakura
Also filed as: SHIMAKURA HARUHITO
6 granted patents·75 citations·filing 1989–1992
83Inventor score
Top patents by PatentIndex Score
6 records- 0178US5219632ACompound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystalsSHIMAKURA HARUHITO·Filed 1989·Granted Jun 15, 1993·31 cites·12 claims
- 0247US4929564AMethod for producing compound semiconductor single crystals and method for producing compound semiconductor devicesNIPPON MINING CO·Filed 1989·Granted May 29, 1990·8 cites·4 claims
- 0345US5137847AMethod of producing GaAs single crystal substrate using three stage annealing and interstage etchingNIPPON MINING CO·Filed 1991·Granted Aug 11, 1992·22 cites·1 claims
- 0435US5214003AProcess for producing a uniform oxide layer on a compound semiconductor substrateNIPPON MINING CO·Filed 1990·Granted May 25, 1993·8 cites·5 claims
- 0535US5173127ASemi-insulating inp single crystals, semiconductor devices having substrates of the crystals and processes for producing the sameNIPPON MINING CO·Filed 1991·Granted Dec 22, 1992·5 cites·8 claims
- 0628US5254507ASemi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the sameNIPPON MINING CO·Filed 1992·Granted Oct 19, 1993·1 cites·4 claims
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