Inventor · disambiguated record
Norio Hayafuji
Also filed as: HAYAFUJI NORIO
26 granted patents·1 pending application·946 citations·filing 1990–2003
97Inventor score
Files withMITSUBISHI ELECTRIC CORP26
Top patents by PatentIndex Score
27 records- 0195US5796127AHigh electron mobility transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 18, 1998·224 cites·4 claims
- 0294US5760426AHeteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13MITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 2, 1998·165 cites·5 claims
- 0392US5100480ASolar cell and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 31, 1992·124 cites·6 claims
- 0476US5439723ASubstrate for producing semiconductor waferMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 8, 1995·28 cites·8 claims
- 0574US6358316B1Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structureMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 19, 2002·45 cites·18 claims
- 0673US5764673ASemiconductor light emitting deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 9, 1998·55 cites·3 claims
- 0770US5701321ASemiconductor laser producing short wavelength lightMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 23, 1997·49 cites·13 claims
- 0870US5279077AMethod for producing semiconductor waferMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 18, 1994·17 cites·5 claims
- 0968US5811843AField effect transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 22, 1998·28 cites·17 claims
- 1062US5728215AMethod for forming a film by selective area MOCVD growthMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 17, 1998·23 cites·27 claims
- 1161US5729030ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 17, 1998·19 cites·15 claims
- 1261US5602414AInfrared detector having active regions and isolating regions formed of CdHgTeMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 11, 1997·26 cites·7 claims
- 1361US5426658ASemiconductor laser including ridge confining buffer layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jun 20, 1995·27 cites·3 claims
- 1458US5316967AMethod for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 31, 1994·24 cites·13 claims
- 1556US5677922ASemiconductor laser with crystalline window layerMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 14, 1997·19 cites·12 claims
- 1651US5420066AMethod for producing semiconductor laser device using etch stop layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 30, 1995·11 cites·5 claims
- 1749US5387544AMethod of making a semiconductor device including carbon as a dopantMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 7, 1995·15 cites·4 claims
- 1842US5357535ASemiconductor laser including an aluminum-rich AlGaAs etch stopping layerMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 18, 1994·7 cites·3 claims
- 1940US5682045AMethod of fabricating semiconductor device and semiconductor device fabricated therebyMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 28, 1997·8 cites·8 claims
- 2039US6037242AMethod of making hetero-structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·7 cites·7 claims
- 2138US5874753AField effect transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 23, 1999·5 cites·10 claims
- 2238US5805628ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·8 cites·11 claims
- 2336US5573960AMethod of manufacturing semiconductor layers by bonding without defects created by bondingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 12, 1996·8 cites·14 claims
- 2434US5394417ASemiconductor laser producing visible lightMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 28, 1995·4 cites·12 claims
- 2530US5467731AMethod of producing a semiconductor structure including a recrystallized filmMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 21, 1995·0 cites·10 claims
- 2630US5315133ACompound semiconductor structure including p-type and n-type regions doped with carbonMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 24, 1994·0 cites·3 claims
- 2727US2005085035A1Heterojunction bipolar transistor and manufacturing method making the sameFiled 2003·Application pending·0 cites
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