Inventor · disambiguated record
Bo-Cyuan Lu
Also filed as: LU BO · LU BO-CYUAN · LÜ BO
37 granted patents·8 pending applications·37 citations·filing 2009–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD40BETTERGY CORP1DOW GLOBAL TECHNOLOGIES LLC1LONGHORN INTELLIGENT TECH CO LTD1MA SHENGMING1
Top patents by PatentIndex Score
45 records- 0195US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
- 0295US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
- 0392US11605555B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
- 0490US2025343069A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0589US11195717B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 0688US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
- 0784US11239309B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·20 claims
- 0884US2024379407A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0983US12451390B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1083US12119268B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 1183US2025006560A1Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1281US10483168B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 1380US10734227B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·2 cites·20 claims
- 1479US2024387237A1Finfet device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1578US11823955B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 1677US12315759B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 1776US10797050B2Fin field effect transistor (finFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·20 claims
- 1875US12218241B2Semiconductor device structure with etch stop layer for reducing RC delayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 1975US10861959B2Deposition selectivity enhancement and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 2074US2024371875A1Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2173US10505021B2FinFet device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
- 2273US10355111B2Deposition selectivity enhancement and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·20 claims
- 2372US11862508B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 2472US11335603B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 2571US11843028B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 2669US12087775B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 2769US11264383B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 2868US11133229B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
- 2967US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3066US11041613B1Ceiling lampLONGHORN INTELLIGENT TECH CO LTD·Filed 2018·Granted Jun 22, 2021·1 cites·14 claims
- 3164US11316047B2Structure and formation method of semiconductor device with monoatomic etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 3264US10854521B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 3363US11041135B2Cutting fluid, preparation method and application thereofXIAN SPACE ENGINE COMPANY LTD·Filed 2019·Granted Jun 22, 2021·0 cites·8 claims
- 3461US10535569B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 3561US10510612B2Low-K gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 3660US10879377B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 3760US10840357B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 3858US10468529B2Structure and formation method of semiconductor device structure with etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
- 3955US10286364B2Mixed matrix membranes for olefin/paraffin separation and method of making thereofBETTERGY CORP·Filed 2017·Granted May 14, 2019·0 cites·40 claims
- 4054US10211318B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 4154US2024014077A1Gate Isolation Regions and Fin Isolation Regions and Method Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4252US11444173B2Semiconductor device structure with salicide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 13, 2022·0 cites·20 claims
- 4350US11955370B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 4446US9006491B2Structure and method for synthesizing and using dialkyl(2,4,6- or 2,6-alkoxyphenyl)phosphine and its tetrafluoroborateMA SHENGMING·Filed 2009·Granted Apr 14, 2015·0 cites·17 claims
- 4538US2019071599A1Light emitting nanoparticles and process of making the sameDOW GLOBAL TECHNOLOGIES LLC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →