Inventor · disambiguated record
Tomonori Morizumi
Also filed as: MORIZUMI TOMONORI
13 granted patents·1 pending application·34 citations·filing 2006–2022
86Inventor score
Top patents by PatentIndex Score
14 records- 0187US7646798B2Nitride semiconductor laser elementNICHIA CORP·Filed 2007·Granted Jan 12, 2010·15 cites·11 claims
- 0281US7600924B2Optical component, light emitting device, and method for manufacturing optical componentNICHIA CORP·Filed 2006·Granted Oct 13, 2009·14 cites·11 claims
- 0365US7668218B2Nitride semiconductor laser elementNICHIA CORP·Filed 2008·Granted Feb 23, 2010·2 cites·24 claims
- 0464US7764722B2Nitride semiconductor laser elementNICHIA CORP·Filed 2008·Granted Jul 27, 2010·2 cites·22 claims
- 0561US2023178959A1Nitride semiconductor laser elementNICHIA CORP·Filed 2022·Application pending·0 cites
- 0657US7830940B2Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknessesNICHIA CORP·Filed 2007·Granted Nov 9, 2010·1 cites·23 claims
- 0754US7773650B2Nitride semiconductor laser elementNICHIA CORP·Filed 2007·Granted Aug 10, 2010·0 cites·22 claims
- 0853US7701995B2Nitride semiconductor laser elementNICHIA CORP·Filed 2008·Granted Apr 20, 2010·0 cites·24 claims
- 0946US7804872B2Nitride semiconductor laser elementNICHIA CORP·Filed 2008·Granted Sep 28, 2010·0 cites·21 claims
- 1046US7521729B2Nitride semiconductor laser element having impurity introduction regionNICHIA CORP·Filed 2007·Granted Apr 21, 2009·0 cites·20 claims
- 1143US9518718B2Bandpass filter for use in light emitting device and light emitting device using the sameNICHIA CORP·Filed 2013·Granted Dec 13, 2016·0 cites·21 claims
- 1243US8900901B2Nitride semiconductor laser elementMASUI SHINGO·Filed 2010·Granted Dec 2, 2014·0 cites·18 claims
- 1342US8102891B2Nitride semiconductor laser elementMORIZUMI TOMONORI·Filed 2010·Granted Jan 24, 2012·0 cites·20 claims
- 1439US8654808B2Nitride semiconductor laser element and method for manufacturing sameMORIZUMI TOMONORI·Filed 2011·Granted Feb 18, 2014·0 cites·15 claims
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