Inventor · disambiguated record
Tunehiko Tubone
Also filed as: TUBONE TUNEHIKO
11 granted patents·174 citations·filing 1990–2003
93Inventor score
Technology areasH10W
Top patents by PatentIndex Score
11 records- 0183US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0279US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0376US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 0473US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 0562US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 0661US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 0761US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 0851US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 0950US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 1050US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 1147US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
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