Inventor · disambiguated record
Chikashi Anayama
Also filed as: ANAYAMA CHIKASHI
20 granted patents·298 citations·filing 1992–2002
95Inventor score
Top patents by PatentIndex Score
20 records- 0178US5408487ASemiconductor laserFUJITSU LTD·Filed 1994·Granted Apr 18, 1995·38 cites·34 claims
- 0276US5668048AMethod of making a semiconductor device utilizing crystal orientation dependence of impurity concentrationFUJITSU LTD·Filed 1995·Granted Sep 16, 1997·42 cites·19 claims
- 0365US5684818AStepped substrate semiconductor laser for emitting light at slant portionFUJITSU LTD·Filed 1994·Granted Nov 4, 1997·19 cites·18 claims
- 0464US5202285ASemiconductor laser having double heterostructure and method of producing sameFUJITSU LTD·Filed 1992·Granted Apr 13, 1993·26 cites·20 claims
- 0560US5783845ASemiconductor device and its manufacture utilizing crystal orientation dependence of impurity concentrationFUJITSU LTD·Filed 1997·Granted Jul 21, 1998·21 cites·9 claims
- 0658US6539040B2Laser diode and fabrication process thereofFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Mar 25, 2003·5 cites·20 claims
- 0758US5436194AStripe laser diode having an improved efficiency for current confinementFUJITSU LTD·Filed 1994·Granted Jul 25, 1995·17 cites·29 claims
- 0856US5568500ASemiconductor laserFUJITSU LTD·Filed 1994·Granted Oct 22, 1996·15 cites·11 claims
- 0952US5336635AManufacturing method of semiconductor laser of patterned-substrate typeFUJITSU LTD·Filed 1993·Granted Aug 9, 1994·19 cites·11 claims
- 1051US5799027AStepped substrate semiconductor laser for emitting light at slant portionFUJITSU LTD·Filed 1997·Granted Aug 25, 1998·14 cites·13 claims
- 1151US5381756AMagnesium doping in III-V compound semiconductorFUJITSU LTD·Filed 1993·Granted Jan 17, 1995·17 cites·7 claims
- 1248US7081639B2Semiconductor photodetection device and fabrication process thereofFUJITSU QUANTUM DEVICES LTD·Filed 2001·Granted Jul 25, 2006·2 cites·15 claims
- 1347US5255281ASemiconductor laser having double heterostructureFUJITSU LTD·Filed 1992·Granted Oct 19, 1993·12 cites·21 claims
- 1446US5621748AStripe laser diode having an improved efficiency for current confinementFUJITSU LTD·Filed 1995·Granted Apr 15, 1997·13 cites·10 claims
- 1545US5862166ASemiconductor laser with light emitting slant plane and method of manufacturing the sameFUJITSU LTD·Filed 1996·Granted Jan 19, 1999·12 cites·17 claims
- 1645US5458085AMagnesium-doping in III-V compound semiconductorFUJITSU LTD·Filed 1994·Granted Oct 17, 1995·12 cites·8 claims
- 1739US5814531AMethod for forming semiconductor laser emitting light from slant planeFUJITSU LTD·Filed 1996·Granted Sep 29, 1998·8 cites·4 claims
- 1835US6686217B2Compound semiconductor device manufacturing methodFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Feb 3, 2004·0 cites·3 claims
- 1935US5375136ASemiconductor laser of patterned-substrate type and structure thereofFUJITSU LTD·Filed 1994·Granted Dec 20, 1994·6 cites·6 claims
- 2031US6501090B2Semiconductor laser and method of manufacturing the sameFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Dec 31, 2002·0 cites·11 claims
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