Inventor · disambiguated record
Stefanovich Genrikh
Also filed as: GENRIKH STEFANOVICH
6 granted patents·2 pending applications·323 citations·filing 2007–2008
86Inventor score
Top patents by PatentIndex Score
8 records- 0197US7417271B2Electrode structure having at least two oxide layers and non-volatile memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 26, 2008·97 cites·19 claims
- 0296US8063421B2Thin film transistor having a graded metal oxide layerKANG DONG-HUN·Filed 2008·Granted Nov 22, 2011·100 cites·12 claims
- 0395US7491987B2Junction field effect thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·56 cites·15 claims
- 0494US7498600B2Variable resistance random access memory device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·63 cites·18 claims
- 0578US7989791B2Diode structure and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 2, 2011·7 cites·12 claims
- 0642US2009072246A1Diode and memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 0737US2009095985A1Multi-layer electrode, cross point memory array and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 0836US8796819B2Non-volatile memory device including a variable resistance materialLEE EUN-HONG·Filed 2007·Granted Aug 5, 2014·0 cites·13 claims
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