Inventor · disambiguated record
Andreas Hilliger
Also filed as: HILLIGER ANDREAS
22 granted patents·4 pending applications·141 citations·filing 2001–2006
95Inventor score
Top patents by PatentIndex Score
26 records- 0175US6787831B2Barrier stack with improved barrier propertiesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 7, 2004·15 cites·23 claims
- 0270US6855565B2Semiconductor device having ferroelectric film and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Feb 15, 2005·12 cites·3 claims
- 0366US6677630B1Semiconductor device having ferroelectric film and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Jan 13, 2004·21 cites·22 claims
- 0465US6800890B1Memory architecture with series grouped by cellsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 5, 2004·14 cites·14 claims
- 0564US6906908B1Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jun 14, 2005·9 cites·15 claims
- 0664US6611449B1Contact for memory cellsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 26, 2003·13 cites·12 claims
- 0761US7071506B2Device for inhibiting hydrogen damage in ferroelectric capacitor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 4, 2006·9 cites·11 claims
- 0859US6724026B2Memory architecture with memory cell groupsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 20, 2004·12 cites·13 claims
- 0958US7378700B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 27, 2008·1 cites·10 claims
- 1056US6815234B2Reducing stress in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 9, 2004·8 cites·10 claims
- 1152US7042705B2Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processingTOSHIBA KK·Filed 2003·Granted May 9, 2006·3 cites·12 claims
- 1251US6946735B2Side-wall barrier structure and method of fabricationINFINEON AG·Filed 2002·Granted Sep 20, 2005·5 cites·15 claims
- 1351US6858442B2Ferroelectric memory integrated circuit with improved reliabilityINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 22, 2005·5 cites·31 claims
- 1451US6614642B1Capacitor over plug structureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·3 cites·17 claims
- 1547US7101785B2Formation of a contact in a device, and the device including the contactINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 5, 2006·3 cites·7 claims
- 1645US7042037B1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 9, 2006·2 cites·11 claims
- 1745US6621683B1Memory cells with improved reliabilityINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·1 cites·32 claims
- 1844US7061035B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 13, 2006·1 cites·1 claims
- 1944US6839220B1Multi-layer barrier allowing recovery anneal for ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·2 cites·16 claims
- 2043US7009230B2Barrier stack with improved barrier propertiesTOSHIBA KK·Filed 2003·Granted Mar 7, 2006·0 cites·28 claims
- 2139US7084027B2Method for producing an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 1, 2006·2 cites·11 claims
- 2238US2004206993A1Process for fabrication of ferroelectric devices with reduced hydrogen ion damageINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
- 2336US7002196B2Ferroelectric capacitor devices and FeRAM devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 21, 2006·0 cites·18 claims
- 2436US2004163233A1Methods of forming electrical connections within ferroelectric devicesFiled 2003·Application pending·0 cites
- 2534US2003224536A1Contact formationFiled 2002·Application pending·0 cites
- 2634US2004201049A1Suppression of electrode re-crystallisation in a ferrocapacitorFiled 2003·Application pending·0 cites
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