Inventor · disambiguated record
Sheng Chiang Hung
Also filed as: HUNG SHENG CHIANG
12 granted patents·2 pending applications·69 citations·filing 2008–2024
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6TAIWAN SEMICONDUCTOR MFG CO LTD3HUNG SHENG CHIANG2HUANG HUAI-YING1LAI FENG-LIANG1
Top patents by PatentIndex Score
14 records- 0192US8624327B2Integrated semiconductor structure for SRAM and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 7, 2014·14 cites·20 claims
- 0289US7773407B28T low leakage SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 10, 2010·22 cites·16 claims
- 0388US8441829B2Stable SRAM cellHUANG HUAI-YING·Filed 2010·Granted May 14, 2013·13 cites·20 claims
- 0485US8330227B2Integrated semiconductor structure for SRAM and fabrication methods thereofHUNG SHENG CHIANG·Filed 2010·Granted Dec 11, 2012·9 cites·20 claims
- 0574US8743579B2Stable SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 3, 2014·3 cites·20 claims
- 0673US2024379530A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0769US8947900B2Stable SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 3, 2015·2 cites·20 claims
- 0868US8908409B2Stable SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 9, 2014·2 cites·20 claims
- 0968US8461634B2Divot engineering for enhanced device performanceYANG LIE-YONG·Filed 2011·Granted Jun 11, 2013·3 cites·20 claims
- 1067US12424537B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 1165US9362399B2Well implant through dummy gate oxide in gate-last processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·1 cites·20 claims
- 1243US10153355B2Semiconductor mixed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 11, 2018·0 cites·20 claims
- 1342US8940589B2Well implant through dummy gate oxide in gate-last processHUNG SHENG CHIANG·Filed 2010·Granted Jan 27, 2015·0 cites·21 claims
- 1430US2013320522A1Re-distribution Layer Via Structure and Method of Making SameLAI FENG-LIANG·Filed 2012·Application pending·0 cites
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