Inventor · disambiguated record
Joel Drewes
Also filed as: DREWES JOEL · DREWES JOEL A
56 granted patents·21 pending applications·782 citations·filing 1997–2011
99Inventor score
Files withMICRON TECHNOLOGY INC55BLOMILEY ERIC R15RAMASWAMY NIRMAL2HONEYWELL INT INC1INVERNESS MEDICAL BIOSTAR INC1
Top patents by PatentIndex Score
77 records- 0199US6852550B2MRAM sense layer area controlMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 8, 2005·219 cites·38 claims
- 0296US7189583B2Method for production of MRAM elementsMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 13, 2007·84 cites·39 claims
- 0392US6707084B2Antiferromagnetically stabilized pseudo spin valve for memory applicationsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 16, 2004·31 cites·17 claims
- 0491US7267999B2MRAM layer having domain wall trapsMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 11, 2007·16 cites·14 claims
- 0591US6900455B2Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabricationMICRON TECHNOLOGY INC·Filed 2003·Granted May 31, 2005·41 cites·44 claims
- 0691US6849464B2Method of fabricating a multilayer dielectric tunnel barrier structureMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 1, 2005·43 cites·59 claims
- 0789US7521356B2Atomic layer deposition systems and methods including silicon-containing tantalum precursor compoundsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 21, 2009·13 cites·28 claims
- 0889US6689622B1Magnetoresistive memory or sensor devices having improved switching properties and method of fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 10, 2004·40 cites·7 claims
- 0987US6743641B2Method of improving surface planarity prior to MRAM bit material depositionMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 1, 2004·32 cites·24 claims
- 1087US6627932B1Magnetoresistive memory deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 30, 2003·26 cites·23 claims
- 1184US6656371B2Methods of forming magnetoresisitive devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 2, 2003·38 cites·39 claims
- 1283US6933112B1Device for mass transport assisted optical assaysTHERMO BIOSTAR INC·Filed 2000·Granted Aug 23, 2005·21 cites·33 claims
- 1380US6677631B1MRAM memory elements and method for manufacture of MRAM memory elementsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·17 cites·30 claims
- 1479US7855085B2System and method for reducing shorting in memory cellsMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 21, 2010·4 cites·14 claims
- 1579US7662649B2Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatusesMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 16, 2010·5 cites·40 claims
- 1678US7214547B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2006·Granted May 8, 2007·6 cites·29 claims
- 1775US6781173B2MRAM sense layer area controlMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·12 cites·38 claims
- 1874US7268023B2Method of forming a pseudo SOI substrate and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·5 cites·34 claims
- 1974US7112454B2System and method for reducing shorting in memory cellsMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 26, 2006·11 cites·36 claims
- 2071US7605417B2Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elementsMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 20, 2009·4 cites·35 claims
- 2169US7943507B2Atomic layer deposition systems and methods including silicon-containing tantalum precursor compoundsROUND ROCK RES LLC·Filed 2009·Granted May 17, 2011·2 cites·25 claims
- 2269US6903399B2Antiferromagnetically stabilized pseudo spin valve for memory applicationsMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 7, 2005·7 cites·17 claims
- 2368US7884405B2Method for production of MRAM elementsMICRON TECHNOLOGY INC·Filed 2008·Granted Feb 8, 2011·4 cites·20 claims
- 2466US6881993B2Device having reduced diffusion through ferromagnetic materialsMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 19, 2005·8 cites·42 claims
- 2565US6900489B2Reducing the effects of néel coupling in MRAM structuresMICRON TECHNOLOGY INC·Filed 2003·Granted May 31, 2005·7 cites·23 claims
- 2665US6870714B2Oxide buffer layer for improved magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 22, 2005·7 cites·64 claims
- 2764US6683806B2Methods of operating MRAM devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 27, 2004·12 cites·56 claims
- 2862US7902580B2Assemblies comprising magnetic elements and magnetic barrier or shieldingMICRON TECHNOLOGY INC·Filed 2009·Granted Mar 8, 2011·2 cites·16 claims
- 2962US7361596B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 22, 2008·2 cites·7 claims
- 3062US7358553B2System and method for reducing shorting in memory cellsMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 15, 2008·1 cites·16 claims
- 3161US7001779B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 21, 2006·6 cites·16 claims
- 3260US7585371B2Substrate susceptors for receiving semiconductor substrates to be deposited uponMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 8, 2009·2 cites·6 claims
- 3360US7153651B1Flow-through optical assay devices providing laminar flow of fluid samples, and methods of construction thereofINVERNESS MEDICAL BIOSTAR INC·Filed 1997·Granted Dec 26, 2006·21 cites·40 claims
- 3458US7371587B2Method for reducing diffusion through ferromagnetic materialsMICRON TECHNOLOGY INC·Filed 2004·Granted May 13, 2008·5 cites·25 claims
- 3557US7517704B2MRAM layer having domain wall trapsMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 14, 2009·0 cites·4 claims
- 3657US2006216945A1Methods of depositing materials over semiconductor substratesBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 3757US2006243208A1Substrate susceptors for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 3857US2006180084A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 3957US2006180087A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4057US2006191483A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4157US2006243209A1Substrate susceptors for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4256US7470552B2Method for production of MRAM elementsMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 30, 2008·2 cites·22 claims
- 4356US6885073B2Method and apparatus providing MRAM devices with fine tuned offsetMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 26, 2005·7 cites·27 claims
- 4455US7034374B2MRAM layer having domain wall trapsMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 25, 2006·3 cites·18 claims
- 4555US2007087576A1Substrate susceptor for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4654US7426097B2Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfacesHONEYWELL INT INC·Filed 2002·Granted Sep 16, 2008·4 cites·21 claims
- 4753US8565016B2System having improved surface planarity for bit material depositionYATES DONALD L·Filed 2008·Granted Oct 22, 2013·0 cites·20 claims
- 4853US7264844B2Forming oxide buffer layer for improved magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 4, 2007·2 cites·16 claims
- 4952US7402833B2Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabricationMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 22, 2008·0 cites·50 claims
- 5051US7538392B2Pseudo SOI substrate and associated semiconductor devicesMICRON TECHNOLOGY INC·Filed 2007·Granted May 26, 2009·0 cites·21 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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