Inventor · disambiguated record
Shigeki Tomishima
Also filed as: TOMISHIMA SHIGEKI
146 granted patents·27 pending applications·3,882 citations·filing 1992–2025
99Inventor score
Files withMITSUBISHI ELECTRIC CORP73INTEL CORP67MICRON TECHNOLOGY INC13RENESAS TECH CORP9TAHOE RES LTD4
Top patents by PatentIndex Score
173 records- 0199US9761297B1Hidden refresh control in dynamic random access memoryINTEL CORP·Filed 2016·Granted Sep 12, 2017·67 cites·25 claims
- 0299US5877978ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 2, 1999·314 cites·16 claims
- 0398US10600462B2Bitcell state retentionINTEL CORP·Filed 2017·Granted Mar 24, 2020·40 cites·18 claims
- 0497US9715916B1Supply-switched dual cell memory bitcellINTEL CORP·Filed 2016·Granted Jul 25, 2017·24 cites·25 claims
- 0597US9600183B2Apparatus, system and method for determining comparison information based on memory dataINTEL CORP·Filed 2014·Granted Mar 21, 2017·30 cites·20 claims
- 0697US6480946B1Memory system for synchronized and high speed data transferMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 12, 2002·181 cites·20 claims
- 0797US6081443ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 27, 2000·246 cites·13 claims
- 0896US6438066B1Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 20, 2002·93 cites·6 claims
- 0995US6618319B2Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 9, 2003·79 cites·4 claims
- 1095US6125078ASynchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 26, 2000·116 cites·9 claims
- 1194US11776619B2Techniques to couple high bandwidth memory device on silicon substrate and package substrateTAHOE RES LTD·Filed 2023·Granted Oct 3, 2023·1 cites·20 claims
- 1294US11262954B2Data processing near data storageINTEL CORP·Filed 2020·Granted Mar 1, 2022·6 cites·20 claims
- 1394US6807109B2Semiconductor device suitable for system in packageRENESAS TECH CORP·Filed 2002·Granted Oct 19, 2004·55 cites·15 claims
- 1493US5838627AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 17, 1998·92 cites·32 claims
- 1593US5687123ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 11, 1997·66 cites·42 claims
- 1692US10490239B2Programmable data pattern for repeated writes to memoryINTEL CORP·Filed 2016·Granted Nov 26, 2019·9 cites·28 claims
- 1792US6489796B2Semiconductor device provided with boost circuit consuming less currentMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 3, 2002·74 cites·9 claims
- 1892US5604710AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 18, 1997·82 cites·50 claims
- 1991US11868665B2Data processing near data storageINTEL CORP·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 2091US11182242B2Technologies for preserving error correction capability in compute-in-memory operationsINTEL CORP·Filed 2019·Granted Nov 23, 2021·7 cites·21 claims
- 2191US6310815B1Multi-bank semiconductor memory device suitable for integration with logicMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 30, 2001·98 cites·23 claims
- 2290US9373395B1Apparatus to reduce retention failure in complementary resistive memoryINTEL CORP·Filed 2015·Granted Jun 21, 2016·12 cites·20 claims
- 2390US6400632B1Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fallMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·56 cites·16 claims
- 2490US6373315B2Signal potential conversion circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·42 cites·15 claims
- 2590US6314042B1Fast accessible semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 6, 2001·73 cites·14 claims
- 2690US5822264ADynamic semiconductor memory device with SOI structure and body refresh circuitryMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 13, 1998·84 cites·17 claims
- 2790US5617369ADynamic semiconductor memory device having excellent charge retention characteristicsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 1, 1997·50 cites·23 claims
- 2889US10069628B2Technologies for physically unclonable functions with magnetic tunnel junctionsINTEL CORP·Filed 2016·Granted Sep 4, 2018·7 cites·25 claims
- 2989US9922695B2Apparatus and method for page copying within sections of a memoryINTEL CORP·Filed 2015·Granted Mar 20, 2018·10 cites·20 claims
- 3089US6147925ASemiconductor device allowing fast sensing with a low power supply voltageMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 14, 2000·80 cites·17 claims
- 3189US6067260ASynchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed accessMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 23, 2000·69 cites·12 claims
- 3288US9804793B2Techniques for a write zero operationINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·25 claims
- 3388US6384674B2Semiconductor device having hierarchical power supply line structure improved in operating speedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·73 cites·18 claims
- 3488US5325336ASemiconductor memory device having power line arranged in a meshed shapeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 28, 1994·47 cites·20 claims
- 3588US5321646ALayout of a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·68 cites·40 claims
- 3687US9934082B2Apparatus and method for detecting single flip-error in a complementary resistive memoryINTEL CORP·Filed 2016·Granted Apr 3, 2018·4 cites·19 claims
- 3787US6411560B1Semiconductor memory device capable of reducing leakage current flowing into substrateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 25, 2002·48 cites·19 claims
- 3887US2025006250A1Techniques to couple high bandwidth memory device on silicon substrate and package substrateTAHOE RES LTD·Filed 2024·Application pending·0 cites
- 3986US11080226B2Technologies for providing a scalable architecture for performing compute operations in memoryINTEL CORP·Filed 2020·Granted Aug 3, 2021·2 cites·22 claims
- 4086US10534747B2Technologies for providing a scalable architecture for performing compute operations in memoryINTEL CORP·Filed 2019·Granted Jan 14, 2020·3 cites·20 claims
- 4185US12087352B2Techniques to couple high bandwidth memory device on silicon substrate and package substrateTAHOE RES LTD·Filed 2023·Granted Sep 10, 2024·0 cites·18 claims
- 4285US9437298B1Self-storing and self-restoring non-volatile static random access memoryINTEL CORP·Filed 2015·Granted Sep 6, 2016·7 cites·23 claims
- 4385USRE36089EColumn selecting circuit in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 9, 1999·52 cites·14 claims
- 4484US6977849B2Semiconductor device suitable for system in packageRENESAS TECH CORP·Filed 2004·Granted Dec 20, 2005·24 cites·5 claims
- 4584US6385125B1Synchronous semiconductor integrated circuit device capable of test time reductionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 7, 2002·57 cites·12 claims
- 4683US5682343AHierarchical bit line arrangement in a semiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 28, 1997·54 cites·26 claims
- 4782US11056179B2Techniques to couple high bandwidth memory device on silicon substrate and package substrateINTEL CORP·Filed 2020·Granted Jul 6, 2021·1 cites·16 claims
- 4882US9934827B2DRAM data path sharing via a split local data busINTEL CORP·Filed 2015·Granted Apr 3, 2018·5 cites·25 claims
- 4982US5604707ASemiconductor memory device responsive to hierarchical internal potentialsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 18, 1997·51 cites·11 claims
- 5081US8737157B2Memory device word line drivers and methodsKIM TAE·Filed 2011·Granted May 27, 2014·6 cites·38 claims
Showing the top 50 of 173 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →