Inventor · disambiguated record
Shin-Yeu Tsai
Also filed as: TSAI SHIN-YEU · TSAL SHIH-YEN
19 granted patents·1 pending application·58 citations·filing 2004–2023
92Inventor score
Top patents by PatentIndex Score
20 records- 0197US9881918B1Forming doped regions in semiconductor stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·27 cites·20 claims
- 0295US9881834B1Contact openings and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 30, 2018·14 cites·20 claims
- 0387US10269796B2Forming doped regions in semiconductor stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·3 cites·20 claims
- 0482US12507472B2Method of making polysilicon structure including protective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0579US9960074B2Integrated bi-layer STI depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·2 cites·20 claims
- 0679US9558955B2Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·3 cites·20 claims
- 0771US11855086B2Polysilicon structure including protective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 0870US12051614B2Isolation regions including two layers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 0970US10276677B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 1067US10720430B2Forming doped regions in semiconductor stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 21, 2020·0 cites·20 claims
- 1165US10522541B2Forming doped regions in semiconductor stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 1264US10978341B2Contact openings and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 1360US10957697B2Polysilicon structure including protective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·0 cites·14 claims
- 1459US10510593B2Contact openings and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 1557US11049945B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·0 cites·20 claims
- 1657US11031280B2Isolation regions including two layers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 1756US6897147B1Solution for copper hillock induced by thermal strain with buffer zone for strain relaxationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 24, 2005·8 cites·19 claims
- 1855US10050035B2Method of making protective layer over polysilicon structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 14, 2018·0 cites·20 claims
- 1947US9324603B2Semiconductor structures with shallow trench isolationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 26, 2016·0 cites·23 claims
- 2040US2007026653A1Cap layer on doped dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
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