Inventor · disambiguated record
Shigeharu Matsushita
Also filed as: MATSUSHITA SHIGEHARU
26 granted patents·2 pending applications·227 citations·filing 1993–2006
96Inventor score
Top patents by PatentIndex Score
28 records- 0189US6891742B2Semiconductor memory deviceSANYO ELECTRIC CO·Filed 2002·Granted May 10, 2005·38 cites·22 claims
- 0280US7379323B2Memory with a refresh portion for rewriting dataSANYO ELECTRIC CO·Filed 2006·Granted May 27, 2008·12 cites·17 claims
- 0376US7366004B2MemorySANYO ELECTRIC CO·Filed 2006·Granted Apr 29, 2008·10 cites·20 claims
- 0475US7362642B2MemorySANYO ELECTRIC CO·Filed 2006·Granted Apr 22, 2008·9 cites·20 claims
- 0571US7297559B2Method of fabricating memory and memorySANYO ELECTRIC CO·Filed 2005·Granted Nov 20, 2007·4 cites·11 claims
- 0669US7652908B2Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cellsMIYAMOTO HIDEAKI·Filed 2005·Granted Jan 26, 2010·7 cites·10 claims
- 0763US6816398B2Memory deviceSANYO ELECTRIC CO·Filed 2002·Granted Nov 9, 2004·12 cites·22 claims
- 0862US6785155B2Ferroelectric memory and operating method thereforSANYO ELECTRIC CO·Filed 2002·Granted Aug 31, 2004·12 cites·18 claims
- 0960US6930906B2Ferroelectric memory and operating method therefor, and memory deviceSANYO ELECTRIC CO·Filed 2003·Granted Aug 16, 2005·11 cites·28 claims
- 1059US7933161B2Memory device configured to refresh memory cells in a power-down statePATRENELLA CAPITAL LTD LLC·Filed 2006·Granted Apr 26, 2011·4 cites·23 claims
- 1159US6888189B2Dielectric element including oxide-based dielectric film and method of fabricating the sameSANYO ELECTRIC CO·Filed 2001·Granted May 3, 2005·7 cites·11 claims
- 1258US6901002B2Ferroelectric memorySANYO ELECTRIC CO·Filed 2004·Granted May 31, 2005·9 cites·22 claims
- 1357US7167386B2Ferroelectric memory and operating method thereforSANYO ELECTRIC CO·Filed 2002·Granted Jan 23, 2007·9 cites·18 claims
- 1457US6720096B1Dielectric elementSANYO ELECTRIC CO·Filed 2000·Granted Apr 13, 2004·7 cites·16 claims
- 1556US5650642AField effect semiconductor deviceSANYO ELECTRIC CO·Filed 1995·Granted Jul 22, 1997·18 cites·23 claims
- 1651US6977402B2Memory device having storage part and thin-film partSANYO ELECTRIC CO·Filed 2004·Granted Dec 20, 2005·4 cites·11 claims
- 1748US7247900B2Dielectric device having dielectric film terminated by halogen atomsSANYO ELECTRIC CO·Filed 2003·Granted Jul 24, 2007·2 cites·8 claims
- 1847US5350709AMethod of doping a group III-V compound semiconductorSANYO ELECTRIC CO·Filed 1993·Granted Sep 27, 1994·17 cites·21 claims
- 1944US7420833B2MemorySANYO ELECTRIC CO·Filed 2004·Granted Sep 2, 2008·4 cites·21 claims
- 2042US5751029AField-effect semiconductor device having heterojunctionSANYO ELECTRIC CO·Filed 1996·Granted May 12, 1998·9 cites·15 claims
- 2136US7440307B2MemorySANYO ELECTRIC CO·Filed 2006·Granted Oct 21, 2008·0 cites·17 claims
- 2236US6762476B2Dielectric element including oxide dielectric film and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2002·Granted Jul 13, 2004·2 cites·11 claims
- 2336US6100547AField effect type semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 1998·Granted Aug 8, 2000·4 cites·12 claims
- 2436US5982023ASemiconductor device and field effect transistorSANYO ELECTRIC CO·Filed 1997·Granted Nov 9, 1999·5 cites·24 claims
- 2536US5557141AMethod of doping, semiconductor device, and method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 1994·Granted Sep 17, 1996·8 cites·16 claims
- 2635US2002053739A1Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2001·Application pending·0 cites
- 2734US2007064514A1Control unit and portable terminalSANYO ELECTRIC CO·Filed 2006·Application pending·0 cites
- 2832US6617660B2Field effect transistor semiconductor and method for manufacturing the sameSANYO ELECTRIC CO·Filed 1999·Granted Sep 9, 2003·3 cites·9 claims
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