Inventor · disambiguated record
Kuo-Tung Chang
Also filed as: CHANG KUO T · CHANG KUO TUNG · Chang kuo
134 granted patents·21 pending applications·4,134 citations·filing 1991–2024
99Inventor score
Files withSPANSION LLC52CYPRESS SEMICONDUCTOR CORP33MOTOROLA INC21ADVANCED MICRO DEVICES INC11LEE CHUNGHO4
Top patents by PatentIndex Score
155 records- 0199US6674138B1Use of high-k dielectric materials in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 6, 2004·490 cites·16 claims
- 0299US5408115ASelf-aligned, split-gate EEPROM deviceMOTOROLA INC·Filed 1994·Granted Apr 18, 1995·499 cites·13 claims
- 0398US6803272B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·149 cites·20 claims
- 0498US6433382B1Split-gate vertically oriented EEPROM device and processMOTOROLA INC·Filed 1995·Granted Aug 13, 2002·246 cites·32 claims
- 0598US5422504AEEPROM memory device having a sidewall spacer floating gate electrode and processMOTOROLA INC·Filed 1994·Granted Jun 6, 1995·203 cites·12 claims
- 0697US5969383ASplit-gate memory device and method for accessing the sameMOTOROLA INC·Filed 1997·Granted Oct 19, 1999·485 cites·12 claims
- 0797US5494838AProcess of making EEPROM memory device having a sidewall spacer floating gate electrodeMOTOROLA INC·Filed 1995·Granted Feb 27, 1996·237 cites·4 claims
- 0897US5467308ACross-point eeprom memory arrayMOTOROLA INC·Filed 1994·Granted Nov 14, 1995·148 cites·9 claims
- 0997US5280446AFlash eprom memory circuit having source side programmingBRIGHT MICROELECTRONICS INC·Filed 1992·Granted Jan 18, 1994·253 cites·5 claims
- 1096US9853039B1Split-gate flash cell formed on recessed substrateCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 26, 2017·16 cites·19 claims
- 1196US5414693ASelf-aligned dual-bit split gate (DSG) flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1994·Granted May 9, 1995·164 cites·3 claims
- 1295US12029041B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 1395US5278439ASelf-aligned dual-bit split gate (DSG) flash EEPROM cellMA YUEH Y·Filed 1991·Granted Jan 11, 1994·225 cites·8 claims
- 1493US5824584AMethod of making and accessing split gate memory deviceMOTOROLA INC·Filed 1997·Granted Oct 20, 1998·97 cites·14 claims
- 1593US5364806AMethod of making a self-aligned dual-bit split gate (DSG) flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1993·Granted Nov 15, 1994·106 cites·3 claims
- 1692US6438030B1Non-volatile memory, method of manufacture, and method of programmingMOTOROLA INC·Filed 2000·Granted Aug 20, 2002·85 cites·9 claims
- 1790US10014380B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 3, 2018·4 cites·14 claims
- 1890US5471422AEEPROM cell with isolation transistor and methods for making and operating the sameMOTOROLA INC·Filed 1994·Granted Nov 28, 1995·68 cites·21 claims
- 1989US9368606B2Memory first process flow and deviceSPANSION LLC·Filed 2012·Granted Jun 14, 2016·9 cites·24 claims
- 2089US7432156B1Memory device and methods for its fabricationSPANSION LLC·Filed 2006·Granted Oct 7, 2008·15 cites·15 claims
- 2188US10872898B2Embedded non-volatile memory device and fabrication method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 22, 2020·4 cites·25 claims
- 2288US5585293AFabrication process for a 1-transistor EEPROM memory device capable of low-voltage operationMOTOROLA INC·Filed 1995·Granted Dec 17, 1996·64 cites·7 claims
- 2386US7915123B1Dual charge storage node memory device and methods for fabricating such deviceSPANSION LLC·Filed 2006·Granted Mar 29, 2011·12 cites·18 claims
- 2486US6613657B1BPSG, SA-CVD liner/P-HDP gap fillADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 2, 2003·31 cites·12 claims
- 2583US9917166B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 13, 2018·3 cites·14 claims
- 2682US8836006B2Integrated circuits with non-volatile memory and methods for manufactureSPANSION LLC·Filed 2012·Granted Sep 16, 2014·4 cites·13 claims
- 2781US9881683B1Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jan 30, 2018·4 cites·18 claims
- 2880US7842618B2System and method for improving mesa width in a semiconductor deviceSPANSION LLC·Filed 2005·Granted Nov 30, 2010·5 cites·17 claims
- 2980US7666739B2Methods for fabricating a split charge storage node semiconductor memorySPANSION LLC·Filed 2006·Granted Feb 23, 2010·10 cites·17 claims
- 3080US6753570B1Memory device and method of makingADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·27 cites·19 claims
- 3179US5981340AMethod of building an EPROM cell without drain disturb and reduced select gate resistanceMOTOROLA INC·Filed 1997·Granted Nov 9, 1999·38 cites·11 claims
- 3277US10242996B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Mar 26, 2019·1 cites·20 claims
- 3377US9997253B1Non-volatile memory array with memory gate line and source line scramblingCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 12, 2018·3 cites·21 claims
- 3476US11257675B2Tilted implant for poly resistorsCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Feb 22, 2022·1 cites·15 claims
- 3576US8802537B1System and method for improving reliability in a semiconductor deviceWU YIDER·Filed 2005·Granted Aug 12, 2014·6 cites·12 claims
- 3676US7851306B2Method for forming a flash memory device with straight word linesSPANSION LLC·Filed 2008·Granted Dec 14, 2010·4 cites·9 claims
- 3776US5646060AMethod for making an EEPROM cell with isolation transistorMOTOROLA INC·Filed 1995·Granted Jul 8, 1997·32 cites·17 claims
- 3875US5429969AProcess for forming electrically programmable read-only memory cell with a merged select/control gateMOTOROLA INC·Filed 1994·Granted Jul 4, 1995·32 cites·20 claims
- 3974US11690227B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Jun 27, 2023·0 cites·21 claims
- 4073US11342429B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 4173US10685724B2Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Jun 16, 2020·2 cites·10 claims
- 4273US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 4373US7659569B2Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut regionSPANSION LLC·Filed 2007·Granted Feb 9, 2010·5 cites·21 claims
- 4473US7564091B2Memory device and methods for its fabricationSPANSION LLC·Filed 2008·Granted Jul 21, 2009·4 cites·5 claims
- 4573US7489560B2Reduction of leakage current and program disturbs in flash memory devicesSPANSION LLC·Filed 2006·Granted Feb 10, 2009·8 cites·8 claims
- 4672US11830942B2Contacts for semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Nov 28, 2023·0 cites·19 claims
- 4772US7488657B2Method and system for forming straight word lines in a flash memory arraySPANSION LLC·Filed 2005·Granted Feb 10, 2009·3 cites·8 claims
- 4871US7675104B2Integrated circuit memory system employing silicon rich layersSPANSION LLC·Filed 2006·Granted Mar 9, 2010·3 cites·10 claims
- 4970US10516044B2Contacts for semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Dec 24, 2019·1 cites·20 claims
- 5070US10141393B1Three dimensional capacitorCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 27, 2018·1 cites·17 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →