Inventor · disambiguated record
Namchil Mun
Also filed as: MUN NAMCHIL
8 granted patents·1 pending application·22 citations·filing 2015–2023
80Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD9
Top patents by PatentIndex Score
9 records- 0193US9673084B2Isolation scheme for high voltage deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Jun 6, 2017·13 cites·22 claims
- 0274US10529819B2High voltage Schottky diode and manufacturing method thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 7, 2020·2 cites·20 claims
- 0374US10510831B2Low on resistance high voltage metal oxide semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 17, 2019·2 cites·16 claims
- 0474US9831304B1Integrated circuits with deep trench isolations and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 28, 2017·3 cites·18 claims
- 0572US10032766B2VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jul 24, 2018·2 cites·20 claims
- 0654US2024243118A1Electrostatic deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 0752US11908930B2Laterally-diffused metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layerGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 0850US12136649B2Deep trench isolation structures with a substrate connectionGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 0949US10504768B1Contact structures to deep trench isolation structures and method of nanufacturing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →