Inventor · disambiguated record
Kwang-Hoon Oh
Also filed as: OH KWANG H · OH KWANG-HOON
9 granted patents·8 pending applications·59 citations·filing 1995–2023
85Inventor score
Files withTRINNO TECH CO LTD6SAMSUNG ELECTRONICS CO LTD3OH KWANG-HOON2TEXAS INSTRUMENTS INC2FAIRCHILD KR SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
17 records- 0184US7645659B2Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2005·Granted Jan 12, 2010·17 cites·9 claims
- 0265US6833568B2Geometry-controllable design blocks of MOS transistors for improved ESD protectionTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 21, 2004·12 cites·10 claims
- 0355US8269304B2MOS gate power semiconductor device with anode of protection diode connected to collector electrodeOH KWANG-HOON·Filed 2010·Granted Sep 18, 2012·2 cites·10 claims
- 0453US12501636B2Power semiconductor device capable of controlling slope of current and voltage during dynamic switchingTRINNO TECH CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·10 claims
- 0550US5728593APower insulated-gate transistor having three terminals and a manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 17, 1998·14 cites·9 claims
- 0648US2025203982A1Power semiconductor device having withstand voltage region of vld structure, and method for manufacturing sameTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0747US2024234508A9Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereofTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0847US2025318275A1Silicon carbide power semiconductor device having folded channel area, and manufacturing method thereforTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0946US12087848B2Power semiconductor device with reduced loss and manufacturing method the sameTRINNO TECH CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·7 claims
- 1046US2023411511A1Power semiconductor device with dual shield structure in silicon carbide and manufacturing method thereofTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 1144US6781204B1Spreading the power dissipation in MOS transistors for improved ESD protectionTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 24, 2004·2 cites·9 claims
- 1243US5861638AInsulated gate bipolar transistorSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 19, 1999·10 cites·16 claims
- 1341US2007181927A1Charge balance insulated gate bipolar transistorYEDINAK JOSEPH A·Filed 2006·Application pending·0 cites
- 1433US2011169080A1Charge balance power device and manufacturing method thereofYUN CHONG-MAN·Filed 2010·Application pending·0 cites
- 1531US2022173744A1Low noise hybrid comparatorRENESAS ELECTRONICS AMERICA INC·Filed 2020·Application pending·0 cites
- 1630US5844258AEmitter switched thyristorSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·2 cites·27 claims
- 1727US2011049563A1Mos gate power semiconductor deviceOH KWANG-HOON·Filed 2010·Application pending·0 cites
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