Inventor · disambiguated record
Simona Lorenti
Also filed as: LORENTI SIMONA
9 granted patents·3 pending applications·34 citations·filing 2001–2017
85Inventor score
Top patents by PatentIndex Score
12 records- 0176US7585743B2Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this methodST MICROELECTRONICS SRL·Filed 2007·Granted Sep 8, 2009·7 cites·22 claims
- 0272US9099322B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2012·Granted Aug 4, 2015·2 cites·10 claims
- 0367US7193256B2Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this methodST MICROELECTRONICS SRL·Filed 2003·Granted Mar 20, 2007·14 cites·22 claims
- 0462US8304311B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2006·Granted Nov 6, 2012·1 cites·34 claims
- 0560US2010154876A1Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication processST MICROELECTRONICS SRL·Filed 2009·Application pending·0 cites
- 0658US9911810B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceST MICROELECTRONICS SRL·Filed 2017·Granted Mar 6, 2018·0 cites·15 claims
- 0755US9607859B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceST MICROELECTRONICS SRL·Filed 2015·Granted Mar 28, 2017·0 cites·18 claims
- 0853US6806170B2Method for forming an interface free layer of silicon on a substrate of monocrystalline siliconST MICROELECTRONICS SRL·Filed 2002·Granted Oct 19, 2004·4 cites·15 claims
- 0951US2016111582A1Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication processST MICROELECTRONICS SRL·Filed 2015·Application pending·0 cites
- 1047US7063798B2Method for realizing microchannels in an integrated structureST MICROELECTRONICS SRL·Filed 2003·Granted Jun 20, 2006·3 cites·35 claims
- 1143US6642121B2Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor depositionST MICROELECTRONICS SRL·Filed 2001·Granted Nov 4, 2003·3 cites·18 claims
- 1240US2006207972A1Method for realizing microchannels in an integrated structureST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
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