Inventor · disambiguated record
Bantval J. Baliga
Also filed as: BALIGA BANTVAL J · BALIGA BANTVAL JAYANT
114 granted patents·6 pending applications·9,439 citations·filing 1974–2023
99Inventor score
Files withGEN ELECTRIC53UNIV NORTH CAROLINA STATE49SILICON SEMICONDUCTOR CORP10MICRO OHM CORP2SILICON WIRELESS CORP2
Top patents by PatentIndex Score
120 records- 0199US6388286B1Power semiconductor devices having trench-based gate electrodes and field platesUNIV NORTH CAROLINA STATE·Filed 1999·Granted May 14, 2002·364 cites·11 claims
- 0299US5998833APower semiconductor devices having improved high frequency switching and breakdown characteristicsUNIV NORTH CAROLINA STATE·Filed 1998·Granted Dec 7, 1999·722 cites·45 claims
- 0399US5637898AVertical field effect transistors having improved breakdown voltage capability and low on-state resistanceUNIV NORTH CAROLINA STATE·Filed 1995·Granted Jun 10, 1997·606 cites·7 claims
- 0499US5233215ASilicon carbide power MOSFET with floating field ring and floating field plateUNIV NORTH CAROLINA STATE·Filed 1992·Granted Aug 3, 1993·331 cites·24 claims
- 0599US4801986AVertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and methodGEN ELECTRIC·Filed 1987·Granted Jan 31, 1989·329 cites·23 claims
- 0698US6649975B2Vertical power devices having trench-based electrodes thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Nov 18, 2003·145 cites·8 claims
- 0798US6191447B1Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming sameMICRO OHM CORP·Filed 1999·Granted Feb 20, 2001·334 cites·9 claims
- 0898US5396085ASilicon carbide switching device with rectifying-gateUNIV NORTH CAROLINA STATE·Filed 1993·Granted Mar 7, 1995·266 cites·28 claims
- 0998US5365102ASchottky barrier rectifier with MOS trenchUNIV NORTH CAROLINA STATE·Filed 1993·Granted Nov 15, 1994·326 cites·18 claims
- 1098US4982260APower rectifier with trenchesGEN ELECTRIC·Filed 1989·Granted Jan 1, 1991·245 cites·19 claims
- 1198US4568958AInversion-mode insulated-gate gallium arsenide field-effect transistorsGEN ELECTRIC·Filed 1984·Granted Feb 4, 1986·149 cites·20 claims
- 1297US6764889B2Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodesSILICON SEMICONDUCTOR CORP·Filed 2003·Granted Jul 20, 2004·126 cites·9 claims
- 1397US6365462B2Methods of forming power semiconductor devices having tapered trench-based insulating regions thereinMICRO OHM CORP·Filed 2000·Granted Apr 2, 2002·190 cites·7 claims
- 1497US6313482B1Silicon carbide power devices having trench-based silicon carbide charge coupling regions thereinUNIV NORTH CAROLINA STATE·Filed 1999·Granted Nov 6, 2001·192 cites·17 claims
- 1597US5612567ASchottky barrier rectifiers and methods of forming sameUNIV NORTH CAROLINA STATE·Filed 1996·Granted Mar 18, 1997·230 cites·38 claims
- 1697US5111253AMulticellular FET having a Schottky diode merged therewithGEN ELECTRIC·Filed 1990·Granted May 5, 1992·279 cites·31 claims
- 1797US4903189ALow noise, high frequency synchronous rectifierGEN ELECTRIC·Filed 1988·Granted Feb 20, 1990·167 cites·20 claims
- 1897US4823176AVertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating areaGEN ELECTRIC·Filed 1987·Granted Apr 18, 1989·165 cites·32 claims
- 1997US4663547AComposite circuit for power semiconductor switchingGEN ELECTRIC·Filed 1981·Granted May 5, 1987·83 cites·2 claims
- 2096US6621121B2Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodesSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Sep 16, 2003·113 cites·11 claims
- 2196US6525372B2Vertical power devices having insulated source electrodes in discontinuous deep trenchesSILICON WIRELESS CORP·Filed 2001·Granted Feb 25, 2003·100 cites·12 claims
- 2296US4967243APower transistor structure with high speed integral antiparallel Schottky diodeGEN ELECTRIC·Filed 1988·Granted Oct 30, 1990·123 cites·7 claims
- 2396US4641174APinch rectifierGEN ELECTRIC·Filed 1983·Granted Feb 3, 1987·112 cites·15 claims
- 2496US4523111ANormally-off, gate-controlled electrical circuit with low on-resistanceGEN ELECTRIC·Filed 1983·Granted Jun 11, 1985·70 cites·6 claims
- 2595US6653691B2Radio frequency (RF) power devices having faraday shield layers thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Nov 25, 2003·65 cites·58 claims
- 2695US4262296AVertical field effect transistor with improved gate and channel structureGEN ELECTRIC·Filed 1979·Granted Apr 14, 1981·76 cites·14 claims
- 2794US6800897B2Integrated circuit power devices having junction barrier controlled schottky diodes thereinSILICON SEMICONDUCTOR CORP·Filed 2003·Granted Oct 5, 2004·71 cites·13 claims
- 2894US6781194B2Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Aug 24, 2004·76 cites·23 claims
- 2994US6545316B1MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating sameSILICON WIRELESS CORP·Filed 2000·Granted Apr 8, 2003·104 cites·5 claims
- 3094US5543637ASilicon carbide semiconductor devices having buried silicon carbide conduction barrier layers thereinUNIV NORTH CAROLINA STATE·Filed 1994·Granted Aug 6, 1996·86 cites·35 claims
- 3194US5323040ASilicon carbide field effect deviceUNIV NORTH CAROLINA STATE·Filed 1993·Granted Jun 21, 1994·120 cites·24 claims
- 3294US4961100ABidirectional field effect semiconductor device and circuitGEN ELECTRIC·Filed 1988·Granted Oct 2, 1990·100 cites·7 claims
- 3392US11276779B1Power MOSFET and JBSFET cell topologies with superior high frequency figure of meritUNIV NORTH CAROLINA STATE·Filed 2020·Granted Mar 15, 2022·2 cites·26 claims
- 3492US5679966ADepleted base transistor with high forward voltage blocking capabilityUNIV NORTH CAROLINA STATE·Filed 1995·Granted Oct 21, 1997·107 cites·34 claims
- 3592US5241195AMerged P-I-N/Schottky power rectifier having extended P-I-N junctionUNIV NORTH CAROLINA STATE·Filed 1992·Granted Aug 31, 1993·93 cites·16 claims
- 3692US4343015AVertical channel field effect transistorGEN ELECTRIC·Filed 1980·Granted Aug 3, 1982·71 cites·12 claims
- 3791US6303410B1Methods of forming power semiconductor devices having T-shaped gate electrodesUNIV NORTH CAROLINA STATE·Filed 2000·Granted Oct 16, 2001·63 cites·12 claims
- 3890US6586833B2Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip linesSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Jul 1, 2003·41 cites·11 claims
- 3990US5399883AHigh voltage silicon carbide MESFETs and methods of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1994·Granted Mar 21, 1995·69 cites·31 claims
- 4090US4998151APower field effect devices having small cell size and low contact resistanceGEN ELECTRIC·Filed 1989·Granted Mar 5, 1991·71 cites·14 claims
- 4190US4994871AInsulated gate bipolar transistor with improved latch-up current level and safe operating areaGEN ELECTRIC·Filed 1988·Granted Feb 19, 1991·63 cites·29 claims
- 4290US4827321AMetal oxide semiconductor gated turn off thyristor including a schottky contactGEN ELECTRIC·Filed 1987·Granted May 2, 1989·64 cites·13 claims
- 4389US6791143B2Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-throughSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Sep 14, 2004·37 cites·8 claims
- 4489US4901127ACircuit including a combined insulated gate bipolar transistor/MOSFETGEN ELECTRIC·Filed 1988·Granted Feb 13, 1990·59 cites·31 claims
- 4588US6075259APower semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltagesUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jun 13, 2000·74 cites·11 claims
- 4688US4620211AMethod of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devicesGEN ELECTRIC·Filed 1984·Granted Oct 28, 1986·71 cites·7 claims
- 4788US4587712AMethod for making vertical channel field controlled device employing a recessed gate structureGEN ELECTRIC·Filed 1985·Granted May 13, 1986·81 cites·21 claims
- 4887US5742076ASilicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistanceUNIV NORTH CAROLINA STATE·Filed 1996·Granted Apr 21, 1998·98 cites·34 claims
- 4987US5449925AVoltage breakdown resistant monocrystalline silicon carbide semiconductor devicesUNIV NORTH CAROLINA STATE·Filed 1994·Granted Sep 12, 1995·55 cites·17 claims
- 5087US5322802AMethod of fabricating silicon carbide field effect transistorUNIV NORTH CAROLINA STATE·Filed 1993·Granted Jun 21, 1994·90 cites·7 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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