Inventor · disambiguated record
Tatsuya Kunisato
Also filed as: KUNISATO TATSUYA
23 granted patents·6 pending applications·521 citations·filing 1995–2017
96Inventor score
Top patents by PatentIndex Score
29 records- 0197US6994751B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Feb 7, 2006·127 cites·12 claims
- 0295US6720196B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Apr 13, 2004·97 cites·26 claims
- 0393US7968897B2Light-emitting device having a support substrate and inclined sidesSANYO ELECTRIC CO·Filed 2005·Granted Jun 28, 2011·30 cites·19 claims
- 0492US7488613B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Granted Feb 10, 2009·19 cites·4 claims
- 0591US5990496ALight emitting device with cap layerSANYO ELECTRIC CO·Filed 1997·Granted Nov 23, 1999·78 cites·15 claims
- 0688US7154123B2Nitride-based semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2005·Granted Dec 26, 2006·15 cites·20 claims
- 0787US7312480B2Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Dec 25, 2007·11 cites·4 claims
- 0886US7355208B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2005·Granted Apr 8, 2008·8 cites·20 claims
- 0985US7829900B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2008·Granted Nov 9, 2010·7 cites·11 claims
- 1084US6162656AManufacturing method of light emitting deviceSANYO ELECTRIC CO·Filed 1999·Granted Dec 19, 2000·48 cites·11 claims
- 1178US10297516B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2017·Granted May 21, 2019·3 cites·7 claims
- 1278US7892874B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Granted Feb 22, 2011·5 cites·10 claims
- 1378US7279344B2Method of forming a nitride-based semiconductorSANYO ELECTRIC CO·Filed 2006·Granted Oct 9, 2007·4 cites·5 claims
- 1474US7592630B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2005·Granted Sep 22, 2009·4 cites·9 claims
- 1573US6734503B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted May 11, 2004·16 cites·32 claims
- 1670US6759139B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Jul 6, 2004·13 cites·23 claims
- 1761US7109530B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2004·Granted Sep 19, 2006·5 cites·5 claims
- 1860US6713845B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted Mar 30, 2004·5 cites·7 claims
- 1953USRE42074EManufacturing method of light emitting deviceSANYO ELECTRIC CO·Filed 2002·Granted Jan 25, 2011·2 cites·86 claims
- 2053US5608752ASemiconductor laser device and method of designing the sameSANYO ELECTRIC CO·Filed 1995·Granted Mar 4, 1997·18 cites·27 claims
- 2152US2008248603A1Nitride-based semiconductor element and method of preparing nitride-based semiconductorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 2247US7768204B2Illumination device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2007·Granted Aug 3, 2010·0 cites·12 claims
- 2346US6928096B2Nitride-based semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Aug 9, 2005·6 cites·20 claims
- 2442US7750551B2Light emitting device and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2006·Granted Jul 6, 2010·0 cites·18 claims
- 2540US2007205426A1Semiconductor light-emitting deviceSANYO ELECTRONIC CO LTD·Filed 2007·Application pending·0 cites
- 2640US2002038870A1Nitride-based semiconductor element and method of preparing nitride-based semiconductorSANYO ELECTRIC CO·Filed 2001·Application pending·0 cites
- 2740US2005141240A1Light emitting device and fabrication method thereofFiled 2004·Application pending·0 cites
- 2834US2016308072A1Semiconductor device having edge termination structure including high-concentration region and low-concentration regionPANASONIC IP MAN CO LTD·Filed 2016·Application pending·0 cites
- 2928US2003057434A1Semiconductor device having improved buffer layersFiled 1999·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →