Inventor · disambiguated record
Jun Osanai
Also filed as: OSANAI JUN
72 granted patents·9 pending applications·912 citations·filing 1992–2014
99Inventor score
Top patents by PatentIndex Score
81 records- 0191US6037627AMOS semiconductor deviceSEIKO INSTR INC·Filed 1997·Granted Mar 14, 2000·103 cites·17 claims
- 0289US6465846B1Semiconductor integrated circuit device having trench-type photodiodeSEIKO INSTR INC·Filed 2000·Granted Oct 15, 2002·45 cites·19 claims
- 0389US6380037B1Method of manufacturing a semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2000·Granted Apr 30, 2002·52 cites·21 claims
- 0488US6534836B1MOSFET semiconductor deviceSEIKO INSTR INC·Filed 2000·Granted Mar 18, 2003·41 cites·17 claims
- 0587US6844578B2Semiconductor integrated circuit device and manufacturing method thereforSEIKO INSTR INC·Filed 2002·Granted Jan 18, 2005·42 cites·42 claims
- 0684US5663589ACurrent regulating semiconductor integrated circuit device and fabrication method of the sameSEIKO INSTR INC·Filed 1994·Granted Sep 2, 1997·56 cites·43 claims
- 0783US6801033B2Voltage converter having switching element with variable substrate potentialSEIKO INSTR INC·Filed 2003·Granted Oct 5, 2004·21 cites·17 claims
- 0882US6511885B2Vertical MOS transistor and method of manufacturing the sameSEIKO INSTR INC·Filed 2001·Granted Jan 28, 2003·30 cites·19 claims
- 0981US6653694B1Reference voltage semiconductorSEIKO INSTR INC·Filed 2001·Granted Nov 25, 2003·27 cites·10 claims
- 1079US7190032B2Insulated gate transistorSEIKO INSTR INC·Filed 2005·Granted Mar 13, 2007·5 cites·33 claims
- 1179US6768174B2Complementary MOS transistors having p-type gate electrodesSEIKO INSTR INC·Filed 2002·Granted Jul 27, 2004·24 cites·42 claims
- 1278US6369409B1Semiconductor device and method of manufacturing the sameSEIKO INSTR INC·Filed 1996·Granted Apr 9, 2002·42 cites·24 claims
- 1377US6495884B2Vertical MOS transistorSEIKO INSTR INC·Filed 2001·Granted Dec 17, 2002·23 cites·19 claims
- 1475US5486716ASemiconductor integrated circuit device with electrostatic damage protectionSEIKO INSTR INC·Filed 1992·Granted Jan 23, 1996·32 cites·10 claims
- 1573US6777752B2Complementary MOS semiconductor deviceSEIKO INSTR INC·Filed 2001·Granted Aug 17, 2004·18 cites·37 claims
- 1672US6586958B2Voltage converter having switching element with variable substrate potentialSEIKO INSTR INC·Filed 2001·Granted Jul 1, 2003·21 cites·16 claims
- 1771US6013940APoly-crystalline silicon film ladder resistorSEIKO INSTR INC·Filed 1995·Granted Jan 11, 2000·32 cites·39 claims
- 1868US8933541B2Semiconductor deviceKATO SHINJIRO·Filed 2009·Granted Jan 13, 2015·4 cites·18 claims
- 1965US9213415B2Reference voltage generatorSEIKO INSTR INC·Filed 2013·Granted Dec 15, 2015·2 cites·3 claims
- 2064US7737027B2Method of manufacturing a semiconductor deviceSEIKO INSTR INC·Filed 2008·Granted Jun 15, 2010·3 cites·20 claims
- 2164US5905291AMISFET semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 1995·Granted May 18, 1999·24 cites·9 claims
- 2263US7545018B2High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereofSEIKO INSTR INC·Filed 2005·Granted Jun 9, 2009·2 cites·41 claims
- 2363US7227231B2Semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2005·Granted Jun 5, 2007·2 cites·6 claims
- 2462US9111951B2Semiconductor deviceSEIKO INSTR INC·Filed 2014·Granted Aug 18, 2015·1 cites·9 claims
- 2562US8168494B2Trench MOS transistor and method of manufacturing the sameRISAKI TOMOMITSU·Filed 2008·Granted May 1, 2012·2 cites·2 claims
- 2662US7352046B2Semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2005·Granted Apr 1, 2008·2 cites·20 claims
- 2761US6949777B2Method of controlling insulated gate transistorSEIKO INSTR INC·Filed 2003·Granted Sep 27, 2005·6 cites·43 claims
- 2861US6525376B1High withstand voltage insulated gate N-channel field effect transistorSEIKO INSTR INC·Filed 1999·Granted Feb 25, 2003·17 cites·4 claims
- 2961US6146945AMethod for manufacturing a semiconductor deviceSEIKO INSTR INC·Filed 1999·Granted Nov 14, 2000·17 cites·4 claims
- 3060US7211867B2Thin film memory, array, and operation method and manufacture method thereforYUTAKA HAYASHI·Filed 2004·Granted May 1, 2007·8 cites·61 claims
- 3160US7192790B2Manufacturing method for a semiconductor deviceSEIKO INSTR INC·Filed 2004·Granted Mar 20, 2007·7 cites·20 claims
- 3260US6426258B1Method of manufacturing a semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 1998·Granted Jul 30, 2002·24 cites·6 claims
- 3360US5696400AMOS-type semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 1995·Granted Dec 9, 1997·20 cites·12 claims
- 3460US5620922AMethod for fabricating CMOS device having low and high resistance portions and wire formed from a single gate polysiliconSEIKO INSTR INC·Filed 1995·Granted Apr 15, 1997·17 cites·16 claims
- 3559US6097064ASemiconductor device and manufacturing method thereofSEIKO INSTR INC·Filed 1997·Granted Aug 1, 2000·18 cites·83 claims
- 3658US6613625B1Method of manufacturing a semiconductor deviceSEIKO INSTR INC·Filed 2002·Granted Sep 2, 2003·8 cites·8 claims
- 3758US6236084B1Semiconductor integrated circuit device having double diffusion insulated gate field effect transistorSEIKO INSTR INC·Filed 1999·Granted May 22, 2001·18 cites·14 claims
- 3855US6972232B2Method of manufacturing a semiconductor deviceSEIKO INSTR INC·Filed 2004·Granted Dec 6, 2005·6 cites·4 claims
- 3955US6653688B2Semiconductor deviceSEIKO INSTR INC·Filed 2002·Granted Nov 25, 2003·6 cites·10 claims
- 4054US6255700B1CMOS semiconductor deviceSEIKO INSTR INC·Filed 1997·Granted Jul 3, 2001·12 cites·18 claims
- 4154US5971836AGrinding machineSEIKO SEIKI KK·Filed 1995·Granted Oct 26, 1999·19 cites·29 claims
- 4252US8012835B2Method of high voltage operation of field effect transistorSEIKO INSTR INC·Filed 2008·Granted Sep 6, 2011·0 cites·6 claims
- 4351US7816212B2Method of high voltage operation of a field effect transistorSEIKO INSTR INC·Filed 2008·Granted Oct 19, 2010·0 cites·12 claims
- 4451US7335518B2Method for manufacturing semiconductor deviceSEIKO INSTR INC·Filed 2004·Granted Feb 26, 2008·3 cites·20 claims
- 4551US7129099B2Method for manufacturing semiconductor deviceSEIKO INSTR INC·Filed 2004·Granted Oct 31, 2006·3 cites·3 claims
- 4649US7528032B2Method for manufacturing semiconductor deviceSEIKO INSTR INC·Filed 2002·Granted May 5, 2009·4 cites·19 claims
- 4749US7351595B2Method for manufacturing semiconductor deviceSEIKO INSTR INC·Filed 2004·Granted Apr 1, 2008·2 cites·7 claims
- 4849US6720633B2High withstand voltage insulated gate N-channel field effect transistorSEIKO INSTR INC·Filed 2002·Granted Apr 13, 2004·3 cites·15 claims
- 4948US9041156B2Semiconductor reference voltage generating deviceYOSHINO HIDEO·Filed 2009·Granted May 26, 2015·0 cites·6 claims
- 5048US8071460B2Method for manufacturing semiconductor deviceRISAKI TOMOMITSU·Filed 2008·Granted Dec 6, 2011·0 cites·6 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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