Inventor · disambiguated record
Toshiyuki Kishi
Also filed as: KISHI TOSHIYUKI
12 granted patents·3 pending applications·259 citations·filing 1993–2021
91Inventor score
Top patents by PatentIndex Score
15 records- 0194US5496753AMethod of fabricating a semiconductor nonvolatile storage deviceCITIZEN WATCH CO LTD·Filed 1993·Granted Mar 5, 1996·128 cites·4 claims
- 0282US5973358ASOI device having a channel with variable thicknessCITIZEN WATCH CO LTD·Filed 1997·Granted Oct 26, 1999·50 cites·9 claims
- 0371US6133605ASemiconductor nonvolatile memory transistor and method of fabricating the sameCITIZEN WATCH CO LTD·Filed 1998·Granted Oct 17, 2000·31 cites·9 claims
- 0460US6492215B1Semiconductor device and fabricating the sameCITIZEN WATCH CO LTD·Filed 2000·Granted Dec 10, 2002·10 cites·4 claims
- 0560US2021308932A1Winding device and manufacturing method of winding bodyTOSHIBA KK·Filed 2021·Application pending·0 cites
- 0654US11594787B2Electrospinning apparatus and method for manufacturing separator-integrated electrodeTOSHIBA KK·Filed 2020·Granted Feb 28, 2023·0 cites·5 claims
- 0753US10113446B2Rotary machine systemMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2014·Granted Oct 30, 2018·1 cites·2 claims
- 0848US5969388AMos device and method of fabricating the sameCITIZEN WATCH CO LTD·Filed 1996·Granted Oct 19, 1999·12 cites·8 claims
- 0948US5949075ARadiation dosimeterCITIZEN WATCH CO LTD·Filed 1997·Granted Sep 7, 1999·14 cites·16 claims
- 1048US2015075423A1Spiral coating apparatusTOSHIBA KK·Filed 2014·Application pending·0 cites
- 1144US9041036B2Semiconductor light emitting device wherein a linear expansion coefficient of an intermediate layer is larger than a linear expansion coefficient of a first semiconductor layer and smaller than a linear expansion coefficient of a wavelength conversion layerTOSHIBA KK·Filed 2013·Granted May 26, 2015·0 cites·19 claims
- 1244US2014356531A1Film formation apparatus and film formation methodTOSHIBA KK·Filed 2014·Application pending·0 cites
- 1342US6087230AMethod of fabricating an SOI device having a channel with variable thicknessCITIZEN WATCH CO LTD·Filed 1998·Granted Jul 11, 2000·7 cites·10 claims
- 1434US6197627B1MOS device and method of fabricating the sameCITIZEN WATCH CO LTD·Filed 1999·Granted Mar 6, 2001·4 cites·4 claims
- 1532US5783849ASemiconductor deviceCITIZEN WATCH CO LTD·Filed 1997·Granted Jul 21, 1998·2 cites·18 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →