Inventor · disambiguated record
Tomonori Okudaira
Also filed as: OKUDAIRA TOMONORI
39 granted patents·10 pending applications·1,627 citations·filing 1991–2015
98Inventor score
Files withMITSUBISHI ELECTRIC CORP30RENESAS TECH CORP8RENESAS ELECTRONICS CORP5MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2TSUTSUMI TOSHIAKI2
Top patents by PatentIndex Score
49 records- 0199US6096133AChemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 1, 2000·409 cites·3 claims
- 0297US5572052AElectronic device using zirconate titanate and barium titanate ferroelectrics in insulating layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 5, 1996·221 cites·3 claims
- 0396US5776254AApparatus for forming thin film by chemical vapor depositionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 7, 1998·132 cites·2 claims
- 0490US5453952ASemiconductor device having peripheral circuit formed of TFT (thin film transistor)MITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 26, 1995·80 cites·22 claims
- 0588US5442213ASemiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·82 cites·13 claims
- 0687US5418388ASemiconductor device having a capacitor with an adhesion layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 23, 1995·72 cites·11 claims
- 0786US5519237ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 21, 1996·43 cites·10 claims
- 0886US5459345ASemiconductor device high dielectric capacitor with narrow contact holeMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 17, 1995·57 cites·7 claims
- 0982US6078072ASemiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 20, 2000·49 cites·4 claims
- 1080US6746876B2Capacitor manufacturing method having dielectric formed before electrodeRENESAS TECH CORP·Filed 2002·Granted Jun 8, 2004·27 cites·14 claims
- 1179US5672533AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·37 cites·1 claims
- 1279US5218219ASemiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·35 cites·8 claims
- 1378US7936016B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2009·Granted May 3, 2011·6 cites·5 claims
- 1478US5164806AElement isolating structure of semiconductor device suitable for high density integrationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·68 cites·11 claims
- 1573US5428239ASemiconductor device having retrograde well and diffusion-type wellMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 27, 1995·48 cites·8 claims
- 1672US7696050B2Method of manufacturing semiconductor device carrying out ion implantation before silicide processRENESAS TECH CORP·Filed 2006·Granted Apr 13, 2010·3 cites·6 claims
- 1772US5364811AMethod of manufacturing a semiconductor memory device with multiple device forming regionsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·26 cites·3 claims
- 1872US5229314AMethod of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 20, 1993·33 cites·2 claims
- 1969US5534458AMethod of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·27 cites·2 claims
- 2067US5489791AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 6, 1996·22 cites·3 claims
- 2166US7517800B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Apr 14, 2009·2 cites·25 claims
- 2266US5404042ASemiconductor memory device having a plurality of well regions of different conductivitiesMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 4, 1995·26 cites·4 claims
- 2365US6278150B1Conductive layer connecting structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 21, 2001·30 cites·18 claims
- 2464US6764896B2Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etchingRENESAS TECH CORP·Filed 2002·Granted Jul 20, 2004·9 cites·10 claims
- 2561US5668041AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 16, 1997·18 cites·1 claims
- 2661US5276344AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 1994·17 cites·27 claims
- 2759US8022445B2Method of manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 20, 2011·1 cites·2 claims
- 2859US5753527AMethod of manufacturing a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 19, 1998·13 cites·5 claims
- 2958US9252793B2Semiconductor deviceTSUTSUMI TOSHIAKI·Filed 2010·Granted Feb 2, 2016·1 cites·16 claims
- 3055US8338247B2Semiconductor device and method of manufacturing sameYAMAGUCHI TADASHI·Filed 2010·Granted Dec 25, 2012·1 cites·7 claims
- 3148US9503018B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·0 cites·17 claims
- 3248US5972748ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·7 cites·5 claims
- 3348US2009079007A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3447US2008121950A1Semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3546US7872314B2Method of manufacturing semiconductor device carrying out ion implantation before silicide processRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 18, 2011·0 cites·5 claims
- 3646US6407419B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 18, 2002·12 cites·9 claims
- 3745US8148248B2Semiconductor device and manufacturing method thereofTSUTSUMI TOSHIAKI·Filed 2011·Granted Apr 3, 2012·0 cites·3 claims
- 3845US6506613B1Method for manufacturing semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 14, 2003·2 cites·12 claims
- 3943US6033732AApparatus for and method of forming thin film by chemical vapor depositionMITSUSHITA DENKI KABUSHIKI KAI·Filed 1998·Granted Mar 7, 2000·7 cites·2 claims
- 4043US2003230480A1Method for depositing sputtered filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Application pending·0 cites
- 4141US2007284671A1Semiconductor device including cmis transistorRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4239US2004102041A1Method of manufacturing semiconductor device with capacitor electrodeRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 4338US2007138573A1Semiconductor device and manufacturing method of the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 4437US5652186ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·4 cites·2 claims
- 4537US2002173096A1Semiconductor integrated circuit and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4636US2002125524A1Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4734US2002135006A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4834US2011037103A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 4930US5157469AField effect transistor having a multilayer interconnection layer therein with tapered sidewall insulatorsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 20, 1992·0 cites·15 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →