Inventor · disambiguated record
Chih-Chen Cho
Also filed as: CHO CHIH-CHEN
91 granted patents·15 pending applications·3,278 citations·filing 1990–2009
99Inventor score
Files withTEXAS INSTRUMENTS INC56MICRON TECHNOLOGY INC29POWERCHIP SEMICONDUCTOR CORP10YANG CHING-SUNG3CHO CHIH-CHEN1
Top patents by PatentIndex Score
106 records- 0197US6140252APorous dielectric material with improved pore surface properties for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 31, 2000·629 cites·14 claims
- 0295US6599789B1Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 29, 2003·67 cites·21 claims
- 0395US5470802AMethod of making a semiconductor device using a low dielectric constant materialTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 28, 1995·166 cites·20 claims
- 0494US5407860AMethod of forming air gap dielectric spaces between semiconductor leadsTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 18, 1995·152 cites·7 claims
- 0593US7436028B2One-time programmable read only memory and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Oct 14, 2008·20 cites·14 claims
- 0693US5488015AMethod of making an interconnect structure with an integrated low density dielectricTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 30, 1996·148 cites·9 claims
- 0792US6448129B1Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 10, 2002·46 cites·10 claims
- 0892US5661344APorous dielectric material with a passivation layer for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 26, 1997·113 cites·9 claims
- 0992US5561318APorous composites as a low dielectric constant material for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 1, 1996·112 cites·8 claims
- 1092US5525857ALow density, high porosity material as gate dielectric for field emission deviceTEXAS INSTRUMENTS INC·Filed 1994·Granted Jun 11, 1996·60 cites·16 claims
- 1191US6716687B2FET having epitaxial silicon growthMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·58 cites·32 claims
- 1291US6501114B2Structures comprising transistor gatesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 31, 2002·45 cites·1 claims
- 1391US6420250B1Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 16, 2002·50 cites·51 claims
- 1491US5579151ASpatial light modulatorTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 26, 1996·107 cites·16 claims
- 1590US7342273B2Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 11, 2008·11 cites·6 claims
- 1690US5789819ALow dielectric constant material for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 4, 1998·89 cites·8 claims
- 1790US5689151AAnode plate for flat panel display having integrated getterTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 18, 1997·66 cites·14 claims
- 1889US5494858AMethod for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applicationsTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 27, 1996·99 cites·12 claims
- 1988US5913145AMethod for fabricating thermally stable contacts with a diffusion barrier formed at high temperaturesTEXAS INSTRUMENTS INC·Filed 1997·Granted Jun 15, 1999·92 cites·13 claims
- 2087US6770927B2Structures comprising transistor gatesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 3, 2004·31 cites·6 claims
- 2187US5472913AMethod of fabricating porous dielectric material with a passivation layer for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 5, 1995·88 cites·13 claims
- 2286US5569058ALow density, high porosity material as gate dielectric for field emission deviceTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 29, 1996·41 cites·6 claims
- 2385US7154142B2Non-volatile memory device and manufacturing method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 26, 2006·9 cites·19 claims
- 2484US5804508AMethod of making a low dielectric constant material for electronicsTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 8, 1998·57 cites·16 claims
- 2584US5747880AInterconnect structure with an integrated low density dielectricTEXAS INSTRUMENTS INC·Filed 1996·Granted May 5, 1998·63 cites·12 claims
- 2683US7939394B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2008·Granted May 10, 2011·9 cites·21 claims
- 2783US7354812B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 8, 2008·29 cites·13 claims
- 2883US6245605B1Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturingTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 12, 2001·62 cites·15 claims
- 2982US6528888B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Mar 4, 2003·27 cites·2 claims
- 3082US5750415ALow dielectric constant layers via immiscible sol-gel processingTEXAS INSTRUMENTS INC·Filed 1994·Granted May 12, 1998·75 cites·15 claims
- 3181US7056823B2Backend metallization method and device obtained therefromMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 6, 2006·7 cites·8 claims
- 3278US6812529B2Suppression of cross diffusion and gate depletionMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 2, 2004·19 cites·38 claims
- 3374US5301204APorous silicon as a light source for rare earth-doped CaF2 laserTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 5, 1994·30 cites·18 claims
- 3473US5656848AHigh thermal resistance backfill material for hybrid UFPA'sTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 12, 1997·37 cites·7 claims
- 3572US7095083B2Methods for making semiconductor structures having high-speed areas and high-density areasMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 22, 2006·4 cites·5 claims
- 3671US6987291B2Integrated transistor circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 17, 2006·9 cites·21 claims
- 3771US5723872AMixed barrier resonant tunnelingTEXAS INSTRUMENTS INC·Filed 1994·Granted Mar 3, 1998·30 cites·3 claims
- 3870US6730553B2Methods for making semiconductor structures having high-speed areas and high-density areasMICRON TECHNOLOGY INC·Filed 2001·Granted May 4, 2004·13 cites·6 claims
- 3967US6583518B2Cross-diffusion resistant dual-polycide semiconductor structure and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·18 cites·45 claims
- 4067US5087485AIsopropanol catalyst for copper chemical vapor depositionTEXAS INSTRUMENTS INC·Filed 1990·Granted Feb 11, 1992·25 cites·34 claims
- 4165US7452775B2Non-volatile memory device and manufacturing method and operating method thereofPOWERSHIP SEMICONDUCTOR CORP·Filed 2006·Granted Nov 18, 2008·2 cites·7 claims
- 4265US5929441ALow mass optical coating for thin film detectorsTEXAS INSTRUMENTS INC·Filed 1997·Granted Jul 27, 1999·30 cites·15 claims
- 4364US7153731B2Method of forming a field effect transistor with halo implant regionsMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 26, 2006·6 cites·23 claims
- 4464US5536965APorous thermal isolation mesas for hybrid uncooled infrared detectorsTEXAS INSTRUMENTS INC·Filed 1995·Granted Jul 16, 1996·25 cites·8 claims
- 4563US7462902B2Nonvolatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 9, 2008·2 cites·11 claims
- 4663US7112482B2Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·5 cites·10 claims
- 4763US7037775B2Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2004·Granted May 2, 2006·6 cites·3 claims
- 4863US6867131B2Apparatus and method of increasing sram cell capacitance with metal fillMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 15, 2005·9 cites·29 claims
- 4962US7663904B2Operating method of one-time programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Granted Feb 16, 2010·1 cites·7 claims
- 5062US6756264B2Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 29, 2004·6 cites·14 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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