Inventor · disambiguated record
Pin-Ju Liang
Also filed as: LIANG PIN-JU
14 granted patents·3 pending applications·9 citations·filing 2017–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17
Top patents by PatentIndex Score
17 records- 0196US11916105B2Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·3 cites·20 claims
- 0288US10741674B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 11, 2020·2 cites·20 claims
- 0382US10504747B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·2 cites·20 claims
- 0481US12183590B2Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0581US2025287655A1Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0680US12317550B2Methods of forming a semiconductor device with corner isolation protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 0777US11605543B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 14, 2023·0 cites·20 claims
- 0876US2025098280A1Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0974US10535751B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·1 cites·20 claims
- 1072US10347741B1Gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·1 cites·20 claims
- 1171US12191212B2Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1270US11107903B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 1366US11289343B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 1462US2021366715A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 1560US11087987B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 1654US11677015B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 1750US11232988B2Wavy profile mitigationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
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