Inventor · disambiguated record
Wen-Han Fang
Also filed as: FANG WEN-HAN
13 granted patents·2 pending applications·27 citations·filing 2014–2024
89Inventor score
Top patents by PatentIndex Score
15 records- 0194US9496402B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·9 cites·20 claims
- 0293US11527636B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 0391US10134861B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 20, 2018·6 cites·20 claims
- 0489US10651311B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 12, 2020·4 cites·20 claims
- 0585US2024371698A1Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2024·Application pending·0 cites
- 0684US10763341B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·2 cites·20 claims
- 0784US2024322009A1Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0881US12136572B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 0981US9799565B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·2 cites·20 claims
- 1080US12002871B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 1179US12310052B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 1279US11469145B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·1 cites·20 claims
- 1372US11437518B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 1464US9437472B2Semiconductor line feature and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·1 cites·18 claims
- 1562US10522411B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →