Inventor · disambiguated record
Naruhisa Miura
Also filed as: MIURA NARUHISA
45 granted patents·3 pending applications·352 citations·filing 2000–2019
98Inventor score
Top patents by PatentIndex Score
48 records- 0194US6566734B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 20, 2003·102 cites·7 claims
- 0291US9825126B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 21, 2017·8 cites·22 claims
- 0391US9741797B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 22, 2017·10 cites·13 claims
- 0490US10510843B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Dec 17, 2019·5 cites·26 claims
- 0590US8716717B2Semiconductor device and method for manufacturing the sameKAWAKAMI TSUYOSHI·Filed 2011·Granted May 6, 2014·12 cites·15 claims
- 0689US9006819B2Power semiconductor device and method for manufacturing sameHINO SHIRO·Filed 2011·Granted Apr 14, 2015·14 cites·18 claims
- 0788US9214458B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Dec 15, 2015·9 cites·30 claims
- 0888US6633070B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 14, 2003·44 cites·10 claims
- 0987US8860039B2Semiconductor deviceMIURA NARUHISA·Filed 2011·Granted Oct 14, 2014·9 cites·19 claims
- 1087US8222649B2Semiconductor device and method of manufacturing the sameMIURA NARUHISA·Filed 2006·Granted Jul 17, 2012·18 cites·9 claims
- 1186US10157986B2Silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Dec 18, 2018·5 cites·13 claims
- 1281US6617654B2Semiconductor device with sidewall spacers and elevated source/drain regionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 9, 2003·28 cites·7 claims
- 1380US9716006B2Semiconductor device manufacturing method and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 25, 2017·3 cites·11 claims
- 1479US9577086B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Feb 21, 2017·5 cites·14 claims
- 1579US8680538B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2008·Granted Mar 25, 2014·8 cites·8 claims
- 1677US8492836B2Power semiconductor deviceMIURA NARUHISA·Filed 2009·Granted Jul 23, 2013·7 cites·15 claims
- 1776US9105715B2Semiconductor device and method for manufacturing the sameMIURA NARUHISA·Filed 2009·Granted Aug 11, 2015·6 cites·10 claims
- 1876US9093361B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Jul 28, 2015·5 cites·12 claims
- 1976US8723259B2Silicon carbide semiconductor deviceNAKAO YUKIYASU·Filed 2010·Granted May 13, 2014·4 cites·6 claims
- 2075US10418444B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Sep 17, 2019·2 cites·9 claims
- 2173US6635938B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 21, 2003·19 cites·22 claims
- 2269US9525057B2Semiconductor deviceMIURA NARUHISA·Filed 2013·Granted Dec 20, 2016·2 cites·17 claims
- 2368US8513735B2Power semiconductor deviceNAKATA SHUHEI·Filed 2009·Granted Aug 20, 2013·4 cites·10 claims
- 2467US10062758B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 28, 2018·1 cites·24 claims
- 2567US9111751B2Silicon carbide semiconductor device and method of fabricating sameFURUKAWA AKIHIKO·Filed 2011·Granted Aug 18, 2015·2 cites·6 claims
- 2667US8093598B2Power semiconductor deviceOHTSUKA KENICHI·Filed 2007·Granted Jan 10, 2012·2 cites·7 claims
- 2765US7928469B2MOSFET and method for manufacturing MOSFETMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Apr 19, 2011·2 cites·14 claims
- 2864US8969960B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2012·Granted Mar 3, 2015·2 cites·4 claims
- 2963US10886372B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jan 5, 2021·0 cites·6 claims
- 3063US9640610B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted May 2, 2017·1 cites·21 claims
- 3163US9293572B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2010·Granted Mar 22, 2016·2 cites·16 claims
- 3261US6624034B2Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reductionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 23, 2003·8 cites·13 claims
- 3358US8367536B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2010·Granted Feb 5, 2013·1 cites·8 claims
- 3457US9190468B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Nov 17, 2015·1 cites·9 claims
- 3556US8252672B2Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the sameWATANABE TOMOKATSU·Filed 2008·Granted Aug 28, 2012·1 cites·6 claims
- 3649US9704947B2Semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jul 11, 2017·0 cites·9 claims
- 3748US2012074508A1Power semiconductor deviceOHTSUKA KENICHI·Filed 2011·Application pending·0 cites
- 3847US9972676B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 15, 2018·0 cites·10 claims
- 3947US9502553B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 22, 2016·0 cites·19 claims
- 4045US9954072B2Silicon-carbide semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Apr 24, 2018·0 cites·12 claims
- 4143US9362391B2Silicon carbide semiconductor device and method of manufacturing the sameTARUI YOICHIRO·Filed 2011·Granted Jun 7, 2016·0 cites·16 claims
- 4242US10002931B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jun 19, 2018·0 cites·17 claims
- 4342US2016211334A1Silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Application pending·0 cites
- 4439US9324782B2Semiconductor deviceMIURA NARUHISA·Filed 2012·Granted Apr 26, 2016·0 cites·14 claims
- 4538US8629498B2Power semiconductor device and method for manufacturing the power semiconductor deviceWATANABE SHOYU·Filed 2009·Granted Jan 14, 2014·0 cites·6 claims
- 4637US10347724B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 9, 2019·0 cites·11 claims
- 4736US2002011635A1Semiconductor device and production method thereofFiled 2000·Application pending·0 cites
- 4834US9076761B2Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor deviceWATANABE TOMOKATSU·Filed 2012·Granted Jul 7, 2015·0 cites·9 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →