Inventor · disambiguated record
Hung-Ju Chien
Also filed as: CHIEN HUNG-JU
11 granted patents·1 pending application·143 citations·filing 1998–2023
91Inventor score
Top patents by PatentIndex Score
12 records- 0169US6399522B1PE-silane oxide particle performance improvementTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 4, 2002·37 cites·16 claims
- 0264US7026233B2Method for reducing defects in post passivation interconnect processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 11, 2006·12 cites·25 claims
- 0360US6479881B2Low temperature process for forming intermetal gap-filling insulating layers in silicon wafer integrated circuitryTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 12, 2002·6 cites·2 claims
- 0458US6268274B1Low temperature process for forming inter-metal gap-filling insulating layers in silicon wafer integrated circuitryTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·19 cites·19 claims
- 0558US6235653B1Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 22, 2001·24 cites·20 claims
- 0646US6211075B1Method of improving metal stack reliabilityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·12 cites·58 claims
- 0746US2024196605A1Semiconductor process for solving contact piping defectPOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2023·Application pending·0 cites
- 0844US7528478B2Semiconductor devices having post passivation interconnections and a buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 5, 2009·0 cites·20 claims
- 0944US6397664B1Method and apparatus for detecting leakage in a flow control valveTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 4, 2002·4 cites·20 claims
- 1043US6042887AProcess for forming a sausg inter metal dielectric layer by pre-coating the reactorTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 28, 2000·13 cites·19 claims
- 1142US6558228B1Method of unloading substrates in chemical-mechanical polishing apparatusTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 6, 2003·11 cites·21 claims
- 1233US6499222B1Template for measuring edge width and method of usingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 31, 2002·5 cites·16 claims
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