Inventor · disambiguated record
Witold Kula
Also filed as: KULA WITOLD
101 granted patents·3 pending applications·1,484 citations·filing 2000–2024
99Inventor score
Files withMICRON TECHNOLOGY INC45MAGIC TECHNOLOGIES INC11HEADWAY TECHNOLOGIES INC7HITACHI GLOBAL STORAGE TECH6HORNG CHENG T6
Top patents by PatentIndex Score
104 records- 0199US9006704B2Magnetic element with improved out-of-plane anisotropy for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Apr 14, 2015·61 cites·21 claims
- 0299US8852760B2Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layerWANG YU-JEN·Filed 2012·Granted Oct 7, 2014·97 cites·17 claims
- 0399US8749003B2High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2013·Granted Jun 10, 2014·51 cites·7 claims
- 0499US8592927B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Nov 26, 2013·81 cites·21 claims
- 0598US9472752B2High thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 18, 2016·30 cites·10 claims
- 0698US9466789B2Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 11, 2016·53 cites·19 claims
- 0798US8946834B2High thermal stability free layer with high out-of-plane anisotropy for magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Feb 3, 2015·44 cites·22 claims
- 0898US8541855B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2011·Granted Sep 24, 2013·45 cites·14 claims
- 0998US8492169B2Magnetic tunnel junction for MRAM applicationsCAO WEI·Filed 2011·Granted Jul 23, 2013·52 cites·18 claims
- 1098US8138561B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAMHORNG CHENG T·Filed 2008·Granted Mar 20, 2012·58 cites·10 claims
- 1198US8080432B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Dec 20, 2011·48 cites·14 claims
- 1298US7936027B2Method of MRAM fabrication with zero electrical shortingMAGIC TECHNOLOGIES INC·Filed 2008·Granted May 3, 2011·79 cites·19 claims
- 1398US7750421B2High performance MTJ element for STT-RAM and method for making the sameMAGIC TECHNOLOGIES INC·Filed 2007·Granted Jul 6, 2010·100 cites·7 claims
- 1497US8871365B2High thermal stability reference structure with out-of-plane aniotropy to magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Oct 28, 2014·33 cites·19 claims
- 1597US7863060B2Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devicesMAGIC TECHNOLOGIES INC·Filed 2009·Granted Jan 4, 2011·85 cites·22 claims
- 1697US7696551B2Composite hard mask for the etching of nanometer size magnetic multilayer based deviceMAGIC TECHNOLOGIES INC·Filed 2007·Granted Apr 13, 2010·74 cites·21 claims
- 1796US9461242B2Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 4, 2016·12 cites·21 claims
- 1896US8923038B2Memory cells, semiconductor device structures, memory systems, and methods of fabricationKULA WITOLD·Filed 2012·Granted Dec 30, 2014·27 cites·28 claims
- 1995US9048411B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2013·Granted Jun 2, 2015·22 cites·11 claims
- 2095US8921961B2Storage element for STT MRAM applicationsKULA WITOLD·Filed 2012·Granted Dec 30, 2014·26 cites·20 claims
- 2195US8722543B2Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devicesBELEN RODOLFO·Filed 2010·Granted May 13, 2014·79 cites·20 claims
- 2295US8609262B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHORNG CHENG T·Filed 2009·Granted Dec 17, 2013·33 cites·16 claims
- 2394US9455400B2Magnetic tunnel junction for MRAM applicationsHEADWAY TECH INC·Filed 2015·Granted Sep 27, 2016·13 cites·6 claims
- 2494US7672093B2Hafnium doped cap and free layer for MRAM deviceMAGIC TECHNOLOGIES INC·Filed 2006·Granted Mar 2, 2010·27 cites·15 claims
- 2593US8786036B2Magnetic tunnel junction for MRAM applicationsCAO WEI·Filed 2011·Granted Jul 22, 2014·14 cites·9 claims
- 2693US7205164B1Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methodsSILICON MAGNETIC SYSTEMS·Filed 2005·Granted Apr 17, 2007·35 cites·18 claims
- 2792US8436437B2High performance MTJ elements for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted May 7, 2013·10 cites·11 claims
- 2891US9786841B2Semiconductor devices with magnetic regions and attracter material and methods of fabricationMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 10, 2017·9 cites·20 claims
- 2991US9680089B1Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 13, 2017·9 cites·24 claims
- 3091US8372661B2High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2007·Granted Feb 12, 2013·18 cites·11 claims
- 3190US10014466B2Semiconductor devices with magnetic and attracter materials and methods of fabricationMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 3, 2018·8 cites·20 claims
- 3289US12015089B2Transistors comprising two-dimensional materials and related memory cells and electronic devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 18, 2024·1 cites·19 claims
- 3389US9406874B2Magnetic memory cells and methods of formationMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 2, 2016·5 cites·18 claims
- 3486US9373777B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Jun 21, 2016·3 cites·7 claims
- 3585US7713755B1Field angle sensor fabricated using reactive ion etchingMAGIC TECHNOLOGIES INC·Filed 2008·Granted May 11, 2010·15 cites·10 claims
- 3684US11121258B2Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 14, 2021·2 cites·34 claims
- 3784US10439131B2Methods of forming semiconductor devices including tunnel barrier materialsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 8, 2019·7 cites·19 claims
- 3884US9466787B2Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 11, 2016·5 cites·25 claims
- 3984US8969982B2Bottom electrode for MRAM deviceXIAO RONGFU·Filed 2010·Granted Mar 3, 2015·4 cites·7 claims
- 4083US9159908B2Composite free layer within magnetic tunnel junction for MRAM applicationsCAO WEI·Filed 2011·Granted Oct 13, 2015·5 cites·11 claims
- 4182US12048167B2Electronic devices including a seed region and magnetic regionsMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 23, 2024·0 cites·18 claims
- 4282US9391265B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Jul 12, 2016·2 cites·8 claims
- 4382US8981503B2STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domainBEACH ROBERT·Filed 2012·Granted Mar 17, 2015·8 cites·20 claims
- 4482US8058698B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Nov 15, 2011·4 cites·4 claims
- 4581US9608197B2Memory cells, methods of fabrication, and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 28, 2017·5 cites·23 claims
- 4680US8878323B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·2 cites·5 claims
- 4779US9368714B2Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 14, 2016·4 cites·24 claims
- 4879US8962348B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Feb 24, 2015·2 cites·11 claims
- 4979US2024339543A1Apparatus and electronic devices including transistors comprising two-dimensional materialsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 5078US9379315B2Memory cells, methods of fabrication, semiconductor device structures, and memory systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 28, 2016·4 cites·17 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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