Inventor · disambiguated record
Sang-Woong Shin
Also filed as: SHIN SANG-WOONG
20 granted patents·5 pending applications·213 citations·filing 1999–2012
95Inventor score
Top patents by PatentIndex Score
25 records- 0185US7516384B2Semiconductor memory testing device and test method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·13 cites·32 claims
- 0283US7587645B2Input circuit of semiconductor memory device and test system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·12 cites·39 claims
- 0380US6396310B2Current sense amplifiers enabling amplification of bit line voltages provided by bit line sense amplifiersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 28, 2002·29 cites·24 claims
- 0477US7855926B2Semiconductor memory device having local sense amplifier with on/off controlSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 21, 2010·9 cites·33 claims
- 0577US6005819ADemand-anticipating power control circuits for integrated circuit devices and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 21, 1999·41 cites·18 claims
- 0675US6920080B2Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 19, 2005·22 cites·23 claims
- 0773US6778465B2Circuit and method for generating output control signal in synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 17, 2004·18 cites·20 claims
- 0872US8514610B2Semiconductor memory cell array including dummy bit-line and word-line and semiconductor memory device having the sameSHIN SANG-WOONG·Filed 2012·Granted Aug 20, 2013·4 cites·10 claims
- 0967US7814359B2High-speed phase-adjusted quadrature data rate (QDR) transceiver and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 12, 2010·6 cites·25 claims
- 1067US7034590B2Delay locked loop circuits and methods preventing erroneous transition from coarse lock to fine lock due to noise or jitterSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·15 cites·18 claims
- 1167US6862250B2Circuit and method for generating output control signal in synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 1, 2005·13 cites·6 claims
- 1265US8374043B2Sense amplifier and semiconductor memory device using itSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 12, 2013·5 cites·16 claims
- 1364US8258856B2Antifuse circuit having protection circuitLEE CHEON-AN·Filed 2009·Granted Sep 4, 2012·3 cites·17 claims
- 1461US7577057B2Circuit and method for generating write data mask signal in synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 18, 2009·5 cites·11 claims
- 1560US8295114B2Semiconductor memory cell array including dummy bit-line and word-line and semiconductor memory device having the sameSHIN SANG-WOONG·Filed 2010·Granted Oct 23, 2012·2 cites·14 claims
- 1653US8310859B2Semiconductor memory device having balancing capacitorsSEO HYEOUNG-WON·Filed 2009·Granted Nov 13, 2012·2 cites·7 claims
- 1753US6987407B2Delay locked loops having delay time compensation and methods for compensating for delay time of the delay locked loopsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 17, 2006·7 cites·20 claims
- 1844US8873277B2Semiconductor memory device having balancing capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 28, 2014·0 cites·9 claims
- 1943US6708261B1Multi-stage data buffers having efficient data transfer characteristics and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 16, 2004·7 cites·6 claims
- 2039US2007075368A1CMOS inverter cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2139US2007018691A1Multi-pad structure for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2238US2011069568A1Semiconductor memory device having local sense amplifier with on/off controlSHIN SANG-WOONG·Filed 2010·Application pending·0 cites
- 2336US7280431B2Method of generating an internal clock for a semiconductor memory device and semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 9, 2007·0 cites·14 claims
- 2435US2007234158A1Method of testing a semiconductor memory device, method of data serialization and data serializerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2534US2013094320A1Address transforming circuits including a random code generator, and related semiconductor memory devices and methodsYOO JAE-KI·Filed 2012·Application pending·0 cites
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