Inventor · disambiguated record
Kao-Su Huang
Also filed as: HUANG KAO-SU
8 granted patents·1 pending application·64 citations·filing 2000–2007
85Inventor score
Files withUNITED MICROELECTRONICS CORP6HUANG KAO-SU1UNITED MICROELECTONICS CORP1UNITED MICROELECTRONIC CORP1
Top patents by PatentIndex Score
9 records- 0189US8377829B2Method of manufacturing a capacitor deep trench and of etching a deep trench openingUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 19, 2013·21 cites·17 claims
- 0288US7214626B2Etching process for decreasing mask defectUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 8, 2007·16 cites·20 claims
- 0380US7344954B2Method of manufacturing a capacitor deep trench and of etching a deep trench openingUNITED MICROELECTONICS CORP·Filed 2006·Granted Mar 18, 2008·11 cites·9 claims
- 0469US6429921B1Structure of a multi-layered thin film protective layerUNITED MICROELECTRONICS CORP·Filed 2000·Granted Aug 6, 2002·11 cites·6 claims
- 0559US7435354B2Treatment method for surface of photoresist layer and method for forming patterned photoresist layerUNITED MICROELECTRONIC CORP·Filed 2005·Granted Oct 14, 2008·1 cites·26 claims
- 0646US6548318B2Fabrication method for a multi-layered thin film protective layerUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 15, 2003·2 cites·12 claims
- 0743US7226798B2Fabrication method for a multi-layered thin film protective layerUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jun 5, 2007·1 cites·20 claims
- 0842US7309641B2Method for rounding bottom corners of trench and shallow trench isolation processUNITED MICROELECTRONICS CORP·Filed 2004·Granted Dec 18, 2007·1 cites·22 claims
- 0941US2007123049A1Semiconductor process and method for removing condensed gaseous etchant residues on waferHUANG KAO-SU·Filed 2005·Application pending·0 cites
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