Inventor · disambiguated record
Hon-Jarn Lin
Also filed as: LIN HON-JARN
21 granted patents·4 pending applications·41 citations·filing 2015–2025
93Inventor score
Top patents by PatentIndex Score
25 records- 0194US10163505B2RRAM array with current limiting elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·12 cites·20 claims
- 0291US11961546B2MRAM reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0390US11367468B1Sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 21, 2022·2 cites·12 claims
- 0488US11783870B2Sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·1 cites·20 claims
- 0587US10163503B2RRAM array with current limiting element to enable efficient forming operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·6 cites·20 claims
- 0687US2025349349A1Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0781US9361980B1RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 0881US2025182798A1Sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0978US12165732B2Sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1078US11081155B2MRAM reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·3 cites·20 claims
- 1178US10319423B2Memory device with a low-current reference circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·4 cites·20 claims
- 1276US11973502B2LatchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 1375US2025087265A1Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1474US10510411B2RRAM array with current limiting elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·20 claims
- 1573US11848040B2Memory device and reference circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1673US9754639B2Memory device and reference circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·2 cites·20 claims
- 1772US11641193B2LatchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 2, 2023·0 cites·20 claims
- 1871US12354635B2MRAM reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 1970US12205632B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 2067US11469745B2LatchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 2166US10157654B2Memory device and reference circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 2265US2025292817A1Mram reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2357US11211106B2Memory device and reference circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
- 2454US10515680B2Memory device and reference circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 2543US11250908B2Segmented reference trimming for memory arraysTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 15, 2022·0 cites·20 claims
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