Inventor · disambiguated record
Li-Te Hsu
Also filed as: HSU LI TE
63 granted patents·10 pending applications·272 citations·filing 2003–2025
98Inventor score
Top patents by PatentIndex Score
73 records- 0198US11088025B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·12 cites·20 claims
- 0298US10141225B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·17 cites·20 claims
- 0398US10083863B1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·77 cites·20 claims
- 0497US11430694B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0597US10510596B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0695US11776847B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0794US10825727B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·5 cites·20 claims
- 0894US9865697B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·20 cites·20 claims
- 0993US10269917B2Method of forming a FinFET with work function tuning layers having stair-step increment sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·7 cites·20 claims
- 1093US9905456B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 1192US11043251B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·11 cites·20 claims
- 1291US10510598B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
- 1390US10679896B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·18 claims
- 1489US10998259B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 4, 2021·4 cites·20 claims
- 1589US7588946B2Controlling system for gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 15, 2009·29 cites·20 claims
- 1689US2025300016A1Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1787US11437484B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
- 1887US10629480B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 1986US12347729B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 2086US10304729B2Method of forming interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·3 cites·20 claims
- 2185US12354913B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2285US10141443B2Semiconductor devices FinFET devices with optimized strained-sourece-drain recess profiles and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 27, 2018·4 cites·11 claims
- 2384US10910223B2Doping through diffusion and epitaxy profile shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 2, 2021·3 cites·20 claims
- 2483US12300593B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2583US10763162B2Interconnect structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·2 cites·20 claims
- 2683US2025246528A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2782US2024274467A1Interconnect Structure of Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2881US11171003B2Doping through diffusion and epitaxy profile shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 9, 2021·2 cites·20 claims
- 2981US10515817B2Method for forming features of semiconductor structure having reduced end-to-end spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 3078US2025226263A1Contact Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3177US11810819B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 3277US10157782B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·1 cites·20 claims
- 3375US12154608B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 3475US9899526B2Fin-type field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·4 cites·14 claims
- 3574US12015070B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 3674US10495970B2Critical dimension uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·20 claims
- 3774US10460995B2Method of manufacture of a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·1 cites·20 claims
- 3873US11810846B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 3972US11996325B2Interconnect structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·0 cites·20 claims
- 4071US11232978B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 4170US9691809B2Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·2 cites·20 claims
- 4269US7018928B2Plasma treatment method to reduce silicon erosion over HDI silicon regionsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 28, 2006·12 cites·20 claims
- 4368US11532515B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 4467US11990167B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
- 4566US11251079B2Method for forming semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 4666US7910014B2Method and system for improving wet chemical bath process stability and productivity in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 22, 2011·3 cites·20 claims
- 4765US10879109B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 4863US11043427B2Method of manufacture of a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 4963US10651079B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 5062US11004730B2Methods of forming conductive features using a vacuum environmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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