Inventor · disambiguated record
Kenzo Manabe
Also filed as: MANABE KENZO
20 granted patents·5 pending applications·92 citations·filing 2002–2022
93Inventor score
Top patents by PatentIndex Score
25 records- 0187US8188547B2Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodesMANABE KENZO·Filed 2010·Granted May 29, 2012·12 cites·18 claims
- 0287US7592674B2Semiconductor device with silicide-containing gate electrode and method of fabricating the sameNEC CORP·Filed 2005·Granted Sep 22, 2009·14 cites·36 claims
- 0383US7968463B2Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layerRENESAS ELECTRONICS CORP·Filed 2007·Granted Jun 28, 2011·11 cites·31 claims
- 0481US7208787B2Semiconductor device and a process for manufacturing a complex oxide filmNEC CORP·Filed 2002·Granted Apr 24, 2007·24 cites·5 claims
- 0572US8921178B2Semiconductor devices with self-aligned source drain contacts and methods for making the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 30, 2014·3 cites·22 claims
- 0672US7786537B2Semiconductor device and method for manufacturing sameNEC CORP·Filed 2006·Granted Aug 31, 2010·5 cites·12 claims
- 0771US9583188B2Semiconductor memory device including rewriting operation for improving the long-term reliability of the resistance variable elementRENESAS ELECTRONICS CORP·Filed 2015·Granted Feb 28, 2017·3 cites·15 claims
- 0869US7385265B2High dielectric constant MOSFET deviceNEC CORP·Filed 2003·Granted Jun 10, 2008·12 cites·37 claims
- 0963US10283647B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted May 7, 2019·2 cites·20 claims
- 1062US9190409B2Replacement metal gate transistor with controlled threshold voltageRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 17, 2015·1 cites·19 claims
- 1161US8890289B2Semiconductor device and manufacturing method thereforMANABE KENZO·Filed 2012·Granted Nov 18, 2014·1 cites·10 claims
- 1260US9343373B2Semiconductor device including work function adjusting element, and method of manufacturing the sameMANABE KENZO·Filed 2013·Granted May 17, 2016·1 cites·8 claims
- 1359US9111783B2Semiconductor devices with self-aligned source drain contacts and methods for making the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 18, 2015·1 cites·12 claims
- 1457US8026554B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2006·Granted Sep 27, 2011·1 cites·25 claims
- 1557US7875935B2Semiconductor device and method for manufacturing the sameNEC CORP·Filed 2007·Granted Jan 25, 2011·1 cites·20 claims
- 1654US9257435B2Semiconductor device and manufacturing method thereforRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 9, 2016·0 cites·7 claims
- 1749US12317499B2Semiconductor memory deviceKIOXIA CORP·Filed 2022·Granted May 27, 2025·0 cites·7 claims
- 1843US8664740B2Semiconductor device and method of producing the sameMANABE KENZO·Filed 2009·Granted Mar 4, 2014·0 cites·6 claims
- 1943US2012025321A1Semiconductor device, and method of manufacturing the sameMANABE KENZO·Filed 2011·Application pending·0 cites
- 2042US8575677B2Semiconductor device and its manufacturing methodWATANABE HEIJI·Filed 2012·Granted Nov 5, 2013·0 cites·9 claims
- 2140US2010084713A1Semiconductor device manufacturing method and semiconductor deviceNEC CORP·Filed 2007·Application pending·0 cites
- 2239US2018166460A1Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 2339US2010219478A1Mosfet, method of fabricating the same, cmosfet, and method of fabricating the sameNEC CORP·Filed 2006·Application pending·0 cites
- 2434US8125016B2Semiconductor device and its manufacturing methodWATANABE HEIJI·Filed 2003·Granted Feb 28, 2012·0 cites·11 claims
- 2533US2010176456A1Semiconductor device and method for manufacturing the sameIKENO DAISUKE·Filed 2010·Application pending·0 cites
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