Inventor · disambiguated record
Eiji Oue
Also filed as: OUE EIJI
19 granted patents·5 pending applications·114 citations·filing 2000–2014
93Inventor score
Top patents by PatentIndex Score
24 records- 0184US7952095B2Display device and manufacturing method thereforHITACHI DISPLAYS LTD·Filed 2008·Granted May 31, 2011·14 cites·7 claims
- 0274US6600178B1Heterojunction bipolar transistorHITACHI LTD·Filed 2000·Granted Jul 29, 2003·19 cites·6 claims
- 0373US6472753B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2001·Granted Oct 29, 2002·14 cites·3 claims
- 0470US6476450B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2001·Granted Nov 5, 2002·12 cites·8 claims
- 0568US7535024B2Display device and fabrication method thereofHITACHI DISPLAYS LTD·Filed 2006·Granted May 19, 2009·4 cites·4 claims
- 0667US7671370B2Display device and fabrication method thereofHITACHI DISPLAYS LTD·Filed 2007·Granted Mar 2, 2010·2 cites·5 claims
- 0767US6501153B2Semiconductor device and drive circuit using the semiconductor devicesHITACHI LTD·Filed 2002·Granted Dec 31, 2002·12 cites·18 claims
- 0865US7704810B2Manufacturing method of display deviceHITACHI DISPLAYS LTD·Filed 2007·Granted Apr 27, 2010·3 cites·20 claims
- 0965US6974977B2Heterojunction bipolar transistorHITACHI DEVICE ENG·Filed 2003·Granted Dec 13, 2005·11 cites·10 claims
- 1063US6815822B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2002·Granted Nov 9, 2004·8 cites·11 claims
- 1160US8058654B2Display device and manufacturing method thereofMIYAKE HIDEKAZU·Filed 2009·Granted Nov 15, 2011·3 cites·8 claims
- 1257US7407853B2Display device and manufacturing method of the sameHITACHI DISPLAYS LTD·Filed 2005·Granted Aug 5, 2008·1 cites·5 claims
- 1352US7521734B2Semiconductor device with reduced base resistanceRENESAS TECH CORP·Filed 2004·Granted Apr 21, 2009·5 cites·8 claims
- 1450US8947610B2Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layerJAPAN DISPLAY INC·Filed 2014·Granted Feb 3, 2015·0 cites·10 claims
- 1547US6956255B2Semiconductor device and drive circuit using the semiconductor devicesHITACHI DEVICE ENG·Filed 2002·Granted Oct 18, 2005·2 cites·19 claims
- 1647US6905934B2Semiconductor device and a method of manufacturing the sameHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jun 14, 2005·4 cites·24 claims
- 1747US2008296583A1Display Device And Manufacturing Method of The SameKAITOH TAKUO·Filed 2008·Application pending·0 cites
- 1845US7952102B2Display device and manufacturing method thereofHITACHI DISPLAYS LTD·Filed 2009·Granted May 31, 2011·0 cites·3 claims
- 1945US7524685B2Manufacturing method of a display deviceHITACHI DISPLAYS LTD·Filed 2006·Granted Apr 28, 2009·0 cites·8 claims
- 2045US2008023704A1Display Device and Fabrication Method ThereofNODA TAKESHI·Filed 2007·Application pending·0 cites
- 2140US2008142803A1Display device and manufacturing method thereofKAITOH TAKUO·Filed 2007·Application pending·0 cites
- 2239US2008176351A1Manufacturing method of display deviceSHIMMOTO HIDEAKI·Filed 2007·Application pending·0 cites
- 2336US8817200B2Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layerASAI TARO·Filed 2011·Granted Aug 26, 2014·0 cites·4 claims
- 2435US2006006391A1Image display devicesMATSUMURA MIEKO·Filed 2005·Application pending·0 cites
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