Inventor · disambiguated record
Bo-Jiun Lin
Also filed as: LIN BO-JIUN
21 granted patents·19 pending applications·91 citations·filing 2008–2025
92Inventor score
Top patents by PatentIndex Score
40 records- 0198US9134633B2System and method for dark field inspectionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·63 cites·20 claims
- 0295US9941157B2Porogen bonded gap filling material in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·9 cites·20 claims
- 0389US10008382B2Semiconductor device having a porous low-k structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·5 cites·20 claims
- 0486US9627256B2Integrated circuit interconnects and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·8 cites·20 claims
- 0586US2025349707A1Interconnect Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US2025351748A1Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0784US11984316B2Porogen bonded gap filling material in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 0882US11450563B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·1 cites·20 claims
- 0981US12300486B2System and method of forming a porous low-k structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1079US9709905B2System and method for dark field inspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·2 cites·20 claims
- 1179US2025359243A1Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1279US2024379417A1Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1379US2024387360A1Interconnect Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1477US2024196764A1Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1575US12142521B2Interconnect structure and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 1675US2024363402A1Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1774US11957070B2Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 1873US12249574B2Interconnect structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 1973US11658120B2Porogen bonded gap filling material in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·0 cites·20 claims
- 2073US2025273572A1Semiconductor structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2171US11637010B2System and method of forming a porous low-k structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 2269US12094771B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 2368US12327792B2Semiconductor structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 2468US2018254212A1Interconnect Structure That Avoids Insulating Layer Damage and Methods of Making the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 2567US11456211B2Method of forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·20 claims
- 2667US2025006800A1Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2765US2014252619A1Interconnect structure that avoids insulating layer damage and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Application pending·0 cites
- 2862US10867922B2Porogen bonded gap filling material in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2962US10679846B2System and method of forming a porous low-K structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 3061US8836127B2Interconnect with flexible dielectric layerLO CHING-YU·Filed 2009·Granted Sep 16, 2014·2 cites·20 claims
- 3161US2025031381A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3257US2025063770A1Semiconductor device and method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3356US8736014B2High mechanical strength additives for porous ultra low-k materialLIN BO-JIUN·Filed 2008·Granted May 27, 2014·1 cites·16 claims
- 3455US2024178102A1Package including backside connector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3554US2023420250A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3654US2024096781A1Package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3754US2024006304A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3854US2024413222A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3949US9905457B2High boiling temperature solvent additives for semiconductor processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 27, 2018·0 cites·20 claims
- 4049US2011073998A1Adhesion Promotion Layer For A Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →