Inventor · disambiguated record
Shang-De Ted Chang
Also filed as: CHANG SHANG-DE · CHANG SHANG-DE T · CHANG SHANG-DE TED
21 granted patents·1 pending application·1,611 citations·filing 1995–2006
97Inventor score
Top patents by PatentIndex Score
22 records- 0198US5581504ANon-volatile electrically erasable memory with PMOS transistor NAND gate structurePROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Dec 3, 1996·283 cites·15 claims
- 0294US5761121APMOS single-poly non-volatile memory structurePROGRAMMABLE MICROELECTRONICS·Filed 1996·Granted Jun 2, 1998·135 cites·19 claims
- 0394US5736764APMOS flash EEPROM cell with single polyPROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Apr 7, 1998·125 cites·10 claims
- 0494US5687118APMOS memory cell with hot electron injection programming and tunnelling erasingPROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Nov 11, 1997·132 cites·18 claims
- 0592US5912842ANonvolatile PMOS two transistor memory cell and arrayPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Jun 15, 1999·106 cites·20 claims
- 0691US7078761B2Nonvolatile memory solution using single-poly pFlash technologyCHINGIS TECHNOLOGY CORP·Filed 2004·Granted Jul 18, 2006·70 cites·7 claims
- 0791US5841165APMOS flash EEPROM cell with single polyPROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Nov 24, 1998·104 cites·11 claims
- 0891US5723355AMethod to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memoryPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Mar 3, 1998·98 cites·5 claims
- 0989US5689459ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1996·Granted Nov 18, 1997·66 cites·28 claims
- 1087US5966329AApparatus and method for programming PMOS memory cellsPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Oct 12, 1999·67 cites·17 claims
- 1186US5706227ADouble poly split gate PMOS flash memory cellPROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Jan 6, 1998·74 cites·3 claims
- 1285US7339229B2Nonvolatile memory solution using single-poly pFlash technologyCHINGIS TECHNOLOGY CORP·Filed 2006·Granted Mar 4, 2008·13 cites·4 claims
- 1384US5801994ANon-volatile memory array architecturePROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Sep 1, 1998·59 cites·24 claims
- 1483US5691939ATriple poly PMOS flash memory cellPROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Nov 25, 1997·59 cites·8 claims
- 1583US5666307APMOS flash memory cell capable of multi-level threshold voltage storagePROGRAMMABLE MICROELECTRONICS·Filed 1995·Granted Sep 9, 1997·55 cites·14 claims
- 1680US5909392APMOS memory array having OR gate architecturePROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Jun 1, 1999·56 cites·20 claims
- 1778US5940325ALow voltage one transistor flash EEPROM cell using fowler-nordheim programming and eraseROHM CORP·Filed 1997·Granted Aug 17, 1999·37 cites·13 claims
- 1878US5587947ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1995·Granted Dec 24, 1996·33 cites·3 claims
- 1972US5615147ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1995·Granted Mar 25, 1997·24 cites·11 claims
- 2056US5687120ALow voltage one transistor flash eeprom cell using fowler-nordheim programming and eraseROHN CORP·Filed 1995·Granted Nov 11, 1997·13 cites·3 claims
- 2149US7505325B2Low voltage low capacitance flash memory arrayCHINGIS TECHNOLOGY CORP·Filed 2006·Granted Mar 17, 2009·2 cites·14 claims
- 2232US2005145924A1Source/drain adjust implantFiled 2004·Application pending·0 cites
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