Inventor · disambiguated record
Byung-Hyuk Min
Also filed as: MIN BYUNG-HYUK
9 granted patents·311 citations·filing 1992–1998
90Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9
Top patents by PatentIndex Score
9 records- 0193US5593909AMethod for fabricating a MOS transistor having an offset resistanceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 14, 1997·106 cites·6 claims
- 0290US5894157AMOS transistor having an offset resistance derived from a multiple region gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Apr 13, 1999·79 cites·18 claims
- 0370US5488005AProcess for manufacturing an offset gate structure thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 30, 1996·53 cites·20 claims
- 0460US5840602AMethods of forming nonmonocrystalline silicon-on-insulator thin-film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 24, 1998·20 cites·15 claims
- 0559US5283760AData transmission circuitSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Feb 1, 1994·20 cites·13 claims
- 0656US5793058AMulti-gate offset source and drain field effect transistors and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 11, 1998·14 cites·19 claims
- 0746US5804837APolysilicon thin-film transistor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 8, 1998·10 cites·31 claims
- 0841US5920085AMultiple floating gate field effect transistors and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 6, 1999·7 cites·2 claims
- 0933US5885859AMethods of fabricating multi-gate, offset source and drain field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 23, 1999·2 cites·9 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →