Inventor · disambiguated record
Franck Arnaud
Also filed as: ARNAUD FRANCK
10 granted patents·7 pending applications·16 citations·filing 2001–2025
82Inventor score
Files withST MICROELECTRONICS CROLLES 2 SAS9ST MICROELECTRONICS INT NV2ARNAUD FRANCK1CHEN XIANGDONG1KONINKL PHILIPS ELECTRONICS NV1
Top patents by PatentIndex Score
17 records- 0188US11653582B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted May 16, 2023·4 cites·19 claims
- 0273US12167703B2Electronic chip with two phase change memoriesST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Dec 10, 2024·0 cites·17 claims
- 0369US12232435B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Feb 18, 2025·0 cites·17 claims
- 0468US10714501B2Co-integration of bulk and SOI transistorsST MICROELECTRONICS ROUSSET·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
- 0564US11690303B2Electronic chip with two phase change memoriesST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Jun 27, 2023·0 cites·21 claims
- 0661US8329525B2Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltagesARNAUD FRANCK·Filed 2010·Granted Dec 11, 2012·3 cites·15 claims
- 0760US11329067B2Co-integration of bulk and SOI transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 0859US2024332406A1Transistor manufacturing methodST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0958US6887759B2LDD-type miniaturized MOS transistorsST MICROELECTRONICS SA·Filed 2001·Granted May 3, 2005·7 cites·17 claims
- 1056US2024014215A1Method for manufacturing high-voltage transistors on a silicon-on-insulator type bulkST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Application pending·0 cites
- 1154US2025357339A1Process of manufacturing an electronic device including a memory circuitST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1254US2023387119A1Semiconductor device of the silicon on insulator type and corresponding manufacturing methodST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Application pending·0 cites
- 1343US2019131520A1Memory cell comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Application pending·0 cites
- 1441US6561839B2Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formedKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 13, 2003·1 cites·12 claims
- 1539US8106462B2Balancing NFET and PFET performance using straining layersCHEN XIANGDONG·Filed 2010·Granted Jan 31, 2012·0 cites·20 claims
- 1636US2017317106A1Mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator typeSTMICROELECTRONICS ROUSSET·Filed 2016·Application pending·0 cites
- 1727US2018090389A1Integrated circuit comprising mos transistors and method of manufacturing the sameST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Application pending·0 cites
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