Inventor · disambiguated record
Yongping Ding
Also filed as: DING YONGPING
22 granted patents·4 pending applications·74 citations·filing 2010–2021
94Inventor score
Top patents by PatentIndex Score
26 records- 0195US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 0294US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 0389US9865678B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jan 9, 2018·4 cites·9 claims
- 0488US8803251B2Termination of high voltage (HV) devices with new configurations and methodsLEE YEEHENG·Filed 2011·Granted Aug 12, 2014·10 cites·5 claims
- 0585US8587061B2Power MOSFET device with self-aligned integrated Schottky diodeLEE YEEHENG·Filed 2012·Granted Nov 19, 2013·6 cites·5 claims
- 0682US9478646B2Methods for fabricating anode shorted field stop insulated gate bipolar transistorBHALLA ANUP·Filed 2011·Granted Oct 25, 2016·4 cites·9 claims
- 0781US9450083B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·2 cites·21 claims
- 0880US8716069B2Semiconductor device employing aluminum alloy lead-frame with anodized aluminumXUE YAN XUN·Filed 2012·Granted May 6, 2014·5 cites·9 claims
- 0979US9704948B2Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereofALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Jul 11, 2017·3 cites·15 claims
- 1077US10381473B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2017·Granted Aug 13, 2019·2 cites·15 claims
- 1176US8252648B2Power MOSFET device with self-aligned integrated Schottky and its manufacturing methodLEE YEEHENG·Filed 2010·Granted Aug 28, 2012·3 cites·11 claims
- 1273US10115814B2Process method and structure for high voltage MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Oct 30, 2018·1 cites·7 claims
- 1373US9997593B2Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereofALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Granted Jun 12, 2018·1 cites·5 claims
- 1468US8697520B2Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETSLEE YEEHENG·Filed 2012·Granted Apr 15, 2014·2 cites·21 claims
- 1564US2020303517A1Process method and structure for high voltage mosfetsALPHA & OMEGA SEMICONDUCTOR·Filed 2020·Application pending·0 cites
- 1661US9431495B2Method of forming SGT MOSFETs with improved termination breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Aug 30, 2016·1 cites·5 claims
- 1760US10522666B2Methods for fabricating anode shorted field stop insulated gate bipolar transistorALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Dec 31, 2019·0 cites·5 claims
- 1856US10050134B2Methods for fabricating anode shorted field stop insulated gate bipolar transistorALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 14, 2018·0 cites·4 claims
- 1955US10665711B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2019·Granted May 26, 2020·0 cites·20 claims
- 2052US9755052B2Process method and structure for high voltage MOSFETSDING YONGPING·Filed 2013·Granted Sep 5, 2017·0 cites·18 claims
- 2152US9627526B2Assymetric poly gate for optimum termination design in trench power MOSFETsLEE YEEHENG·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 2247US12371390B2Modified calcium silicate board and surface treatment method and application thereofJIANGSU LONGING NEW MATERIAL TECH CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·7 claims
- 2347US9887283B2Process method and structure for high voltage MOSFETsDING YONGPING·Filed 2013·Granted Feb 6, 2018·0 cites·7 claims
- 2445US2016372542A9Termination of high voltage (hv) devices with new configurations and methodsLEE YEEHENG·Filed 2014·Application pending·0 cites
- 2544US2016056098A9Semiconductor device employing aluminum alloy lead-frame with anodized aluminumXUE YAN XUN·Filed 2014·Application pending·0 cites
- 2634US2013224919A1Method for making gate-oxide with step-graded thickness in trenched dmos device for reduced gate-to-drain capacitanceDING YONGPING·Filed 2012·Application pending·0 cites
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