Inventor · disambiguated record
Yu-Lung Yeh
Also filed as: YEH YU-LUNG
57 granted patents·14 pending applications·193 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
71 records- 0196US9985072B1CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 29, 2018·21 cites·20 claims
- 0295US10553733B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·12 cites·19 claims
- 0394US11177302B2CMOS image sensor structure with microstructures formed on semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 16, 2021·3 cites·20 claims
- 0494US10157946B2Method for forming CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·7 cites·20 claims
- 0594US10157944B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·14 cites·20 claims
- 0693US10879406B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 0791US11996429B2CMOS image sensor structure with microstructures on backside surface of semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·1 cites·20 claims
- 0891US10868053B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0990US11594459B2Passivation layer for a semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 1090US10211244B2Image sensor device with reflective structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·5 cites·19 claims
- 1190US9397130B1CMOS image sensor structure with crosstalk improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 19, 2016·5 cites·20 claims
- 1289US10438980B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 8, 2019·4 cites·20 claims
- 1388US9818779B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 14, 2017·4 cites·20 claims
- 1487US12195866B2Plating membraneTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1587US2024274632A1Cmos image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1686US11393937B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 1786US10784150B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·3 cites·20 claims
- 1886US2025101628A1Plating membraneTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1985US6756671B2Microelectronic device with a redistribution layer having a step shaped portion and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·68 cites·9 claims
- 2085US2025364344A1Passivation layer for a semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2185US2025351607A1Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2284US10153319B2CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 11, 2018·3 cites·20 claims
- 2384US10056427B1Front side illuminated image sensor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 2483US2023387150A1Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2582US11562923B2Semiconductor arrangement including a first electrical insulator layer and a second electrical insulator layer and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·1 cites·20 claims
- 2681US12363928B2Surface damage control in diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2781US12046615B2Semiconductor device including deep trench isolation structure comprising dielectric structure and copper structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·1 cites·20 claims
- 2881US9711521B2Substrate fabrication method to improve RF (radio frequency) device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 2981US9337229B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·3 cites·20 claims
- 3080US2025311257A1Surface damage control in diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US2025329577A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3279US9263437B2Mechanisms for forming metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 16, 2016·5 cites·20 claims
- 3378US11990493B2Image sensor device with reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 3478US2024347377A1Fabrication method of metal-free soi waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3577US12456655B2Passivation layer for a semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 3677US9620553B2CMOS image sensor structure with crosstalk improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·2 cites·20 claims
- 3777US8552486B2Forming metal-insulator-metal capacitors over a top metal layerWU KUN-MAO·Filed 2011·Granted Oct 8, 2013·6 cites·20 claims
- 3877US2024371680A1Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3976US2024391761A1Semiconductor structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4075US12453203B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 4175US8741732B2Forming metal-insulator-metal capacitors over a top metal layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 3, 2014·3 cites·20 claims
- 4274US12094756B2Semiconductor arrangement comprising isolation structure comprising at least two electrical insulator layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 4374US12040221B2Fabrication method of metal-free SOI waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4474US11830892B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 4574US11302734B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 12, 2022·1 cites·20 claims
- 4674US10707361B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 4773US11814743B2Plating membraneTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 4871US11342372B2Image sensor device with reflective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 4971US10734427B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 5070US12368070B2LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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