Assignee
WORLEDGE DANIEL C
US·6 granted patents·105 citations·filing 2010–2012
Top patents by PatentIndex Score
6 records- 0198US8324697B2Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memoryWORLEDGE DANIEL C·Filed 2010·Granted Dec 4, 2012·57 cites·3 claims
- 0294US8482968B2Non-volatile magnetic tunnel junction transistorWORLEDGE DANIEL C·Filed 2010·Granted Jul 9, 2013·21 cites·20 claims
- 0394US8233249B2Magnetic tunnel junction transistor deviceWORLEDGE DANIEL C·Filed 2010·Granted Jul 31, 2012·15 cites·23 claims
- 0482US8406040B2Spin-torque based memory device using a magnesium oxide tunnel barrierWORLEDGE DANIEL C·Filed 2010·Granted Mar 26, 2013·5 cites·21 claims
- 0581US8536668B2Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memoryWORLEDGE DANIEL C·Filed 2012·Granted Sep 17, 2013·4 cites·14 claims
- 0665US8107285B2Read direction for spin-torque based memory deviceWORLEDGE DANIEL C·Filed 2010·Granted Jan 31, 2012·3 cites·18 claims
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →