Assignee
GRUPP DANIEL E
US·3 granted patents·47 citations·filing 2011–2012
Top patents by PatentIndex Score
3 records- 0196US9425277B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsGRUPP DANIEL E·Filed 2012·Granted Aug 23, 2016·18 cites·18 claims
- 0294US8431469B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsGRUPP DANIEL E·Filed 2011·Granted Apr 30, 2013·11 cites·2 claims
- 0393US8263467B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorGRUPP DANIEL E·Filed 2011·Granted Sep 11, 2012·18 cites·37 claims
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