Assignee
ZHENG CHUNSHENG
CN·1 granted patent·1 pending application·2 citations·filing 2011–2012
Top patents by PatentIndex Score
2 records- 0145US8927350B2Integration flow for LDD and spacer fabrication on a sacrificial amorphous carbon gate structureZHENG CHUNSHENG·Filed 2012·Granted Jan 6, 2015·2 cites·5 claims
- 0227US2012302038A1Method for preparing a shallow trench isolation structure with the stress of its isolation oxide being tuned by ion implantationZHENG CHUNSHENG·Filed 2011·Application pending·0 cites
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